Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
|
3120mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description of HFP2N60U-VB
1. **Package type**: TO220
- The TO220 package provides good heat dissipation and mechanical strength, allowing the MOSFET to operate stably in high-power applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration makes this MOSFET suitable for various switching and amplification circuits, providing efficient current control.
3. **Drain-source voltage (VDS)**: 650V
- The drain-source voltage of up to 650V is suitable for use in high-voltage environments, ensuring that the MOSFET can operate stably.
4. **Gate-source voltage (VGS)**: ±30V
- Supporting a gate-source voltage of ±30V provides a larger control voltage range for the MOSFET, enhancing its flexibility and stability.
5. **Throw Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, allowing the MOSFET to turn on at a relatively low gate-source voltage, suitable for various control circuit applications.
6. **On-resistance (RDS(ON))**:
- 3900mΩ @ VGS=4.5V
- 3120mΩ @ VGS=10V
- The on-resistance at different gate-source voltages is 3900mΩ and 3120mΩ respectively. Such resistance values are suitable for low current applications to reduce power consumption.
7. **Maximum Drain Current (ID)**: 2A
- The maximum drain current is 2A, allowing the MOSFET to handle medium load currents, suitable for a variety of current control scenarios.
8. **Technology**: Plannar
- Plannar technology is used, which is suitable for medium and low current, high voltage applications, providing reliable switching performance and good electrical characteristics.
Domain and module applications：
III. Application Fields and Module Examples
1. **High Voltage Switching Circuit**:
- The high voltage handling capability of HFP2N60U-VB makes it suitable for high voltage switching circuits. For example, in high voltage power management systems, this MOSFET can stably switch high voltage loads to ensure system stability and reliability.
2. **Power Converter**:
- In power converter applications, the high drain-source voltage capability and low on-resistance of HFP2N60U-VB make it a suitable choice. It can effectively handle switching tasks in high voltage DC-DC converters and improve conversion efficiency.
3. **High Voltage Load Switch**:
- Due to its high drain-source voltage capability and medium current handling capability, HFP2N60U-VB is suitable for high voltage load switching applications. For example, in high voltage load control in industrial equipment, this MOSFET can effectively switch high voltage loads.
4. **Power amplifier**:
- In power amplifier applications, the high voltage tolerance and moderate on-resistance of HFP2N60U-VB enable it to operate stably in a high voltage environment, thereby improving the overall performance and reliability of the amplifier.
5. **High voltage switch module**:
- In high voltage switch modules, the high voltage and medium current capabilities of HFP2N60U-VB enable it to effectively control the switching of high voltage power supplies, making it suitable for various power management and protection applications.
HFP2N60U-VB is a MOSFET designed for high voltage and medium current applications. With its high voltage tolerance and stable switching performance, it is suitable for a variety of high voltage switching and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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