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HFH10N80-VB Product details

Product introduction:

1. HFH10N80-VB Product Introduction

HFH10N80-VB is a high-voltage single N-channel MOSFET in TO247 package. This MOSFET adopts SJ_Multi-EPI technology and is designed to provide high-voltage and high-current switching solutions. The maximum drain-source voltage of HFH10N80-VB is 800V, which is suitable for stable operation in high-voltage environments. Its threshold voltage is 3.5V, ensuring reliable conduction at lower gate-source voltages. The on-resistance of the MOSFET is 500mΩ at a gate-source voltage of 10V, and it can support a maximum drain current of 11A. Its high voltage resistance and moderate on-resistance make it excel in high-power applications and suitable for demanding power management and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 800V 3.5V 11A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 800V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 800V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. HFH10N80-VB Detailed parameter description

- **Package type**: TO247
- **Channel configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI

Domain and module applications:

3. Application fields and module examples

HFH10N80-VB's high withstand voltage characteristics and stable performance enable it to excel in multiple high voltage and high power applications. Here are some typical application fields:

1. **Power switch module**: In the power switch module, the 800V maximum drain-source voltage of HFH10N80-VB enables it to handle high voltage power switching requirements, suitable for power supply and high voltage power management systems.

2. **Power converter**: This MOSFET is suitable for high voltage power converters such as AC-DC converters and DC-DC converters, and can work stably in high voltage environments to improve power conversion efficiency.

3. **Inverter system**: In inverter systems, such as solar inverters and uninterruptible power supply (UPS) systems, the high withstand voltage characteristics of HFH10N80-VB support high voltage input and output, ensuring the stability and efficiency of power conversion.

4. **High-voltage motor drive**: HFH10N80-VB is able to handle high voltage and high current, suitable for high-voltage motor drive applications such as electric vehicle drive systems and industrial motor control, providing reliable motor switching control.

5. **High-power power management**: In high-power power management applications such as power protection and switch control, HFH10N80-VB is able to handle high voltage and high current, ensuring system stability and reliability.

HFH10N80-VB's high withstand voltage and excellent conduction performance make it an ideal choice for a variety of high-voltage, high-power switching and control applications, providing a reliable and efficient solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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