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HFD6N70U-VB Product details
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HFD6N70U-VB MOSFET Product Introduction
HFD6N70U-VB is a high voltage N-channel MOSFET in TO252 package, designed to handle switching needs in high voltage applications. It supports drain-source voltage (VDS) up to 700V and gate-source voltage (VGS) of ±30V, suitable for stable operation in high voltage environments. The MOSFET has a threshold voltage of 3.5V, an on-resistance of 2400mΩ (@ VGS=10V), and can withstand a maximum leakage current (ID) of 2A. Using SJ_Multi-EPI technology, HFD6N70U-VB provides excellent high voltage performance and reliability, and is suitable for a variety of applications requiring high voltage switching.
HFD6N70U-VB is a high voltage N-channel MOSFET in TO252 package, designed to handle switching needs in high voltage applications. It supports drain-source voltage (VDS) up to 700V and gate-source voltage (VGS) of ±30V, suitable for stable operation in high voltage environments. The MOSFET has a threshold voltage of 3.5V, an on-resistance of 2400mΩ (@ VGS=10V), and can withstand a maximum leakage current (ID) of 2A. Using SJ_Multi-EPI technology, HFD6N70U-VB provides excellent high voltage performance and reliability, and is suitable for a variety of applications requiring high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO252
- This package is suitable for surface mounting, has good heat dissipation performance and reliability, and is suitable for high-power applications.
- **Configuration:** Single N-channel
- Single N-channel MOSFET design, suitable for application scenarios requiring single-channel switching, providing efficient switching performance.
- **VDS (drain-source voltage):** 700V
- This MOSFET can handle drain-source voltages up to 700V, suitable for switching needs in high-voltage applications.
- **VGS (gate-source voltage):** ±30V
- Supports gate-source voltages of ±30V, providing sufficient driving range for the MOSFET to ensure stable switching operation.
- **Vth (threshold voltage):** 3.5V
- The minimum gate-source voltage required to turn on the MOSFET, ensuring that the MOSFET can be reliably turned on at lower voltages.
- **RDS(ON):** 2400mΩ @ VGS=10V
- The drain-source resistance of the MOSFET in the on state. A higher on resistance is suitable for high voltage applications and can handle a certain power load.
- **ID(Drain Current):** 2A
- The maximum continuous current that the MOSFET can handle, suitable for medium current switching applications.
- **Technology:** SJ_Multi-EPI
- Using SJ_Multi-EPI technology, this technology optimizes the high voltage handling capability and power performance of the MOSFET, improving its reliability and efficiency.
- **Package:** TO252
- This package is suitable for surface mounting, has good heat dissipation performance and reliability, and is suitable for high-power applications.
- **Configuration:** Single N-channel
- Single N-channel MOSFET design, suitable for application scenarios requiring single-channel switching, providing efficient switching performance.
- **VDS (drain-source voltage):** 700V
- This MOSFET can handle drain-source voltages up to 700V, suitable for switching needs in high-voltage applications.
- **VGS (gate-source voltage):** ±30V
- Supports gate-source voltages of ±30V, providing sufficient driving range for the MOSFET to ensure stable switching operation.
- **Vth (threshold voltage):** 3.5V
- The minimum gate-source voltage required to turn on the MOSFET, ensuring that the MOSFET can be reliably turned on at lower voltages.
- **RDS(ON):** 2400mΩ @ VGS=10V
- The drain-source resistance of the MOSFET in the on state. A higher on resistance is suitable for high voltage applications and can handle a certain power load.
- **ID(Drain Current):** 2A
- The maximum continuous current that the MOSFET can handle, suitable for medium current switching applications.
- **Technology:** SJ_Multi-EPI
- Using SJ_Multi-EPI technology, this technology optimizes the high voltage handling capability and power performance of the MOSFET, improving its reliability and efficiency.
Domain and module applications：
Application Examples
The high voltage and medium current capabilities of the HFD6N70U-VB MOSFET make it suitable for multiple fields and modules:
1. **High Voltage Power Switch:** Due to its high drain-source voltage of 700V, the HFD6N70U-VB is ideal for high voltage power switching applications such as switching power supplies and voltage converters. It can stably handle high voltage loads and improve system reliability and efficiency.
2. **Lighting Power Supply:** In applications that require high voltage lighting power, such as high voltage fluorescent lamp and LED lamp driver power supplies, the HFD6N70U-VB is able to provide stable switching performance and support power management under high voltage conditions.
3. **Motor Drive:** The HFD6N70U-VB is suitable for high voltage motor drive systems, such as drive circuits for industrial motors and power tools. It can handle switching requirements in high voltage environments, ensuring stability and efficiency of motor control.
4. **Power Conversion:** In power conversion applications, such as high voltage DC-DC converters, the HFD6N70U-VB is able to handle high voltage switching operations, providing efficient power conversion solutions.
The HFD6N70U-VB MOSFET excels in high voltage power switching, lighting power supplies, motor drives, and power conversion, thanks to its high voltage handling capability and medium current capability.
The high voltage and medium current capabilities of the HFD6N70U-VB MOSFET make it suitable for multiple fields and modules:
1. **High Voltage Power Switch:** Due to its high drain-source voltage of 700V, the HFD6N70U-VB is ideal for high voltage power switching applications such as switching power supplies and voltage converters. It can stably handle high voltage loads and improve system reliability and efficiency.
2. **Lighting Power Supply:** In applications that require high voltage lighting power, such as high voltage fluorescent lamp and LED lamp driver power supplies, the HFD6N70U-VB is able to provide stable switching performance and support power management under high voltage conditions.
3. **Motor Drive:** The HFD6N70U-VB is suitable for high voltage motor drive systems, such as drive circuits for industrial motors and power tools. It can handle switching requirements in high voltage environments, ensuring stability and efficiency of motor control.
4. **Power Conversion:** In power conversion applications, such as high voltage DC-DC converters, the HFD6N70U-VB is able to handle high voltage switching operations, providing efficient power conversion solutions.
The HFD6N70U-VB MOSFET excels in high voltage power switching, lighting power supplies, motor drives, and power conversion, thanks to its high voltage handling capability and medium current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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