中文
English
HFD6N60U-VB Product details
Back to previous pageProduct introduction：
1. HFD6N60U-VB Product Introduction
HFD6N60U-VB is a high-voltage N-channel MOSFET in TO252 package, designed for high voltage applications. This MOSFET adopts SJ_Multi-EPI technology and supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V. It has a turn-on voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 1000mΩ (at VGS=10V), and can handle a maximum drain current (ID) of 5A. HFD6N60U-VB is suitable for electronic systems that require high voltage isolation and stability, such as power conversion and switching circuits.
HFD6N60U-VB is a high-voltage N-channel MOSFET in TO252 package, designed for high voltage applications. This MOSFET adopts SJ_Multi-EPI technology and supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V. It has a turn-on voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 1000mΩ (at VGS=10V), and can handle a maximum drain current (ID) of 5A. HFD6N60U-VB is suitable for electronic systems that require high voltage isolation and stability, such as power conversion and switching circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of HFD6N60U-VB
1. **Package type**: TO252
- The TO252 package provides good thermal management capabilities and mechanical stability for the MOSFET, making it suitable for use in high-power applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of high-voltage switching applications and provides efficient current control.
3. **Drain-source voltage (VDS)**: 650V
- The drain-source voltage of up to 650V enables it to work stably in a high-voltage environment and is suitable for high-voltage circuit design.
4. **Gate-source voltage (VGS)**: ±30V
- Supporting gate-source voltages up to ±30V provides flexible control options for the MOSFET and enhances its stability.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which enables the MOSFET to start conducting at a lower gate-source voltage, suitable for a variety of control circuits.
6. **On-Resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- The on-resistance is 1000mΩ at VGS=10V, suitable for low current applications to reduce power consumption.
7. **Maximum Drain Current (ID)**: 5A
- The maximum drain current is 5A, which enables it to handle medium load current and is suitable for a variety of current control scenarios.
8. **Technology**: SJ_Multi-EPI
- Adopts SJ_Multi-EPI technology, which optimizes the switching performance and high voltage tolerance of the MOSFET, improving overall performance and reliability.
1. **Package type**: TO252
- The TO252 package provides good thermal management capabilities and mechanical stability for the MOSFET, making it suitable for use in high-power applications.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of high-voltage switching applications and provides efficient current control.
3. **Drain-source voltage (VDS)**: 650V
- The drain-source voltage of up to 650V enables it to work stably in a high-voltage environment and is suitable for high-voltage circuit design.
4. **Gate-source voltage (VGS)**: ±30V
- Supporting gate-source voltages up to ±30V provides flexible control options for the MOSFET and enhances its stability.
5. **Throw-On Voltage (Vth)**: 3.5V
- The turn-on voltage is 3.5V, which enables the MOSFET to start conducting at a lower gate-source voltage, suitable for a variety of control circuits.
6. **On-Resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- The on-resistance is 1000mΩ at VGS=10V, suitable for low current applications to reduce power consumption.
7. **Maximum Drain Current (ID)**: 5A
- The maximum drain current is 5A, which enables it to handle medium load current and is suitable for a variety of current control scenarios.
8. **Technology**: SJ_Multi-EPI
- Adopts SJ_Multi-EPI technology, which optimizes the switching performance and high voltage tolerance of the MOSFET, improving overall performance and reliability.
Domain and module applications：
3. Application fields and module examples
1. **Power converter**:
- The high voltage handling capability of HFD6N60U-VB makes it very suitable for use in power converters. It can stably switch current in a high voltage environment, and its high voltage withstand performance ensures the reliability of the power system, especially in high voltage DC to DC (DC-DC) converters.
2. **Switching circuit**:
- In switching circuit applications, the high voltage tolerance and moderate on-resistance of HFD6N60U-VB enable it to effectively control high voltage loads. Its 650V drain-source voltage and 5A drain current capability make it excellent in switching applications that require high voltage isolation.
3. **Inverter**:
- In inverter applications, this MOSFET is able to handle high voltage DC input and convert it into a stable AC output. Its high voltage tolerance and medium current capability make it suitable for use in the key switching link in the inverter to achieve efficient power conversion.
4. **High Voltage Switch**:
- HFD6N60U-VB is suitable for various high voltage switching applications, such as high voltage power switch or high voltage load switch. It can work stably in high voltage scenarios and provide reliable switching performance.
5. **Power Management System**:
- In the power management system, the high voltage tolerance and stable performance of HFD6N60U-VB enable it to effectively manage high voltage power distribution and improve the overall reliability and efficiency of the system.
Due to its high voltage handling capability and good switching performance, HFD6N60U-VB has become an ideal choice for a variety of high voltage applications and can provide reliable performance in strict working environments.
1. **Power converter**:
- The high voltage handling capability of HFD6N60U-VB makes it very suitable for use in power converters. It can stably switch current in a high voltage environment, and its high voltage withstand performance ensures the reliability of the power system, especially in high voltage DC to DC (DC-DC) converters.
2. **Switching circuit**:
- In switching circuit applications, the high voltage tolerance and moderate on-resistance of HFD6N60U-VB enable it to effectively control high voltage loads. Its 650V drain-source voltage and 5A drain current capability make it excellent in switching applications that require high voltage isolation.
3. **Inverter**:
- In inverter applications, this MOSFET is able to handle high voltage DC input and convert it into a stable AC output. Its high voltage tolerance and medium current capability make it suitable for use in the key switching link in the inverter to achieve efficient power conversion.
4. **High Voltage Switch**:
- HFD6N60U-VB is suitable for various high voltage switching applications, such as high voltage power switch or high voltage load switch. It can work stably in high voltage scenarios and provide reliable switching performance.
5. **Power Management System**:
- In the power management system, the high voltage tolerance and stable performance of HFD6N60U-VB enable it to effectively manage high voltage power distribution and improve the overall reliability and efficiency of the system.
Due to its high voltage handling capability and good switching performance, HFD6N60U-VB has become an ideal choice for a variety of high voltage applications and can provide reliable performance in strict working environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
