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HFD5N70S-VB Product details
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1. HFD5N70S-VB Product Introduction
HFD5N70S-VB is a high voltage single N-channel MOSFET packaged in TO252. This MOSFET can withstand drain-source voltage (VDS) up to 700V and supports gate-source voltage (VGS) of ±30V. Its turn-on voltage (Vth) is 3.5V, and it uses SJ_Multi-EPI technology to provide a relatively high on-resistance (RDS(ON)) of 2400mΩ @ VGS=10V. The maximum drain current (ID) of this MOSFET is 2A. The high voltage handling capability and specific technology of HFD5N70S-VB make it suitable for high voltage switching and power management applications.
HFD5N70S-VB is a high voltage single N-channel MOSFET packaged in TO252. This MOSFET can withstand drain-source voltage (VDS) up to 700V and supports gate-source voltage (VGS) of ±30V. Its turn-on voltage (Vth) is 3.5V, and it uses SJ_Multi-EPI technology to provide a relatively high on-resistance (RDS(ON)) of 2400mΩ @ VGS=10V. The maximum drain current (ID) of this MOSFET is 2A. The high voltage handling capability and specific technology of HFD5N70S-VB make it suitable for high voltage switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | 2400mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HFD5N70S-VB Detailed parameter description
- **Package type (Package)**: TO252
- **Channel configuration (Configuration)**: Single N channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throwing voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology type (Technology)**: SJ_Multi-EPI technology
- **Package type (Package)**: TO252
- **Channel configuration (Configuration)**: Single N channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Throwing voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS=10V
- **Drain current (ID)**: 2A
- **Technology type (Technology)**: SJ_Multi-EPI technology
Domain and module applications：
3. HFD5N70S-VB Application Fields and Module Examples
1. **High Voltage Switch**: The 700V drain-source voltage of HFD5N70S-VB makes it particularly suitable for high voltage switching applications. In situations where high voltage circuits need to be controlled, such as power converters, inverters, and high voltage power modules, this MOSFET can stably handle high voltage switching requirements to ensure the stability and safety of the circuit.
2. **Power Management System**: Due to its high drain-source voltage and high gate-source voltage tolerance, HFD5N70S-VB is suitable for switching and regulation modules in power management systems. In high voltage power converters, overvoltage protection, and power regulation modules, it can effectively control current flow and manage power.
3. **Industrial Equipment**: In industrial equipment, such as motor drives and high voltage control systems, HFD5N70S-VB can handle high voltage signals to ensure reliable operation of the equipment. Its high voltage handling capability is suitable for high voltage and high power requirements in industrial environments.
4. **Power Converter**: In power converter design, HFD5N70S-VB can be used for high voltage switching applications, and its high drain-source voltage capability and robust on-resistance help optimize power efficiency and stability. Suitable for the switching part of high voltage AC-DC converters and DC-DC converters.
The high voltage handling capability and dedicated technology of HFD5N70S-VB make it an important application in high voltage switching, power management, industrial equipment and power converters. Although its on-resistance is relatively high, these characteristics make it a reliable choice in high voltage and high power applications.
1. **High Voltage Switch**: The 700V drain-source voltage of HFD5N70S-VB makes it particularly suitable for high voltage switching applications. In situations where high voltage circuits need to be controlled, such as power converters, inverters, and high voltage power modules, this MOSFET can stably handle high voltage switching requirements to ensure the stability and safety of the circuit.
2. **Power Management System**: Due to its high drain-source voltage and high gate-source voltage tolerance, HFD5N70S-VB is suitable for switching and regulation modules in power management systems. In high voltage power converters, overvoltage protection, and power regulation modules, it can effectively control current flow and manage power.
3. **Industrial Equipment**: In industrial equipment, such as motor drives and high voltage control systems, HFD5N70S-VB can handle high voltage signals to ensure reliable operation of the equipment. Its high voltage handling capability is suitable for high voltage and high power requirements in industrial environments.
4. **Power Converter**: In power converter design, HFD5N70S-VB can be used for high voltage switching applications, and its high drain-source voltage capability and robust on-resistance help optimize power efficiency and stability. Suitable for the switching part of high voltage AC-DC converters and DC-DC converters.
The high voltage handling capability and dedicated technology of HFD5N70S-VB make it an important application in high voltage switching, power management, industrial equipment and power converters. Although its on-resistance is relatively high, these characteristics make it a reliable choice in high voltage and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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