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HFD5N50U-VB Product details
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Product Introduction
HFD5N50U-VB is a high voltage N-channel MOSFET in TO252 package and based on SJ_Multi-EPI technology. It has a drain-source voltage withstand capability of 650V and a continuous drain current of 5A. This MOSFET is particularly suitable for application environments that require high voltage tolerance and stability, providing good switching performance and reliable operation.
HFD5N50U-VB is a high voltage N-channel MOSFET in TO252 package and based on SJ_Multi-EPI technology. It has a drain-source voltage withstand capability of 650V and a continuous drain current of 5A. This MOSFET is particularly suitable for application environments that require high voltage tolerance and stability, providing good switching performance and reliable operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: HFD5N50U-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Continuous drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Model**: HFD5N50U-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Continuous drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **High voltage power switch**: The high drain-source voltage tolerance of HFD5N50U-VB makes it very suitable for high voltage power switch applications. It can effectively control high voltage loads in power management systems, such as switching operations in high voltage DC-DC converters and AC-DC power adapters.
2. **Industrial power conversion**: In industrial power conversion applications, HFD5N50U-VB is able to handle high voltage and high power requirements. Its high voltage withstand characteristics and stable performance make it suitable for motor drives, industrial power supplies and power conversion equipment, ensuring reliable operation of the system under high voltage environments.
3. **Lighting control system**: This MOSFET can be used in high voltage lighting control systems, such as fluorescent lamps or LED drive circuits. Its high voltage tolerance and switching performance can effectively control light switches, providing stable and reliable lighting control solutions.
4. **Power protection circuit**: The high voltage and high current capabilities of HFD5N50U-VB make it suitable for power protection circuits, such as overvoltage protection and overcurrent protection systems. In these applications, it can effectively handle sudden voltage and current situations and protect other electronic components from damage.
With its high drain-source voltage tolerance, stable switching performance and ability to adapt to high voltage applications, HFD5N50U-VB provides a reliable solution for high voltage power switches, industrial power conversion, lighting control and power protection circuits.
1. **High voltage power switch**: The high drain-source voltage tolerance of HFD5N50U-VB makes it very suitable for high voltage power switch applications. It can effectively control high voltage loads in power management systems, such as switching operations in high voltage DC-DC converters and AC-DC power adapters.
2. **Industrial power conversion**: In industrial power conversion applications, HFD5N50U-VB is able to handle high voltage and high power requirements. Its high voltage withstand characteristics and stable performance make it suitable for motor drives, industrial power supplies and power conversion equipment, ensuring reliable operation of the system under high voltage environments.
3. **Lighting control system**: This MOSFET can be used in high voltage lighting control systems, such as fluorescent lamps or LED drive circuits. Its high voltage tolerance and switching performance can effectively control light switches, providing stable and reliable lighting control solutions.
4. **Power protection circuit**: The high voltage and high current capabilities of HFD5N50U-VB make it suitable for power protection circuits, such as overvoltage protection and overcurrent protection systems. In these applications, it can effectively handle sudden voltage and current situations and protect other electronic components from damage.
With its high drain-source voltage tolerance, stable switching performance and ability to adapt to high voltage applications, HFD5N50U-VB provides a reliable solution for high voltage power switches, industrial power conversion, lighting control and power protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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