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HFD5N50S-VB Product details
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1. HFD5N50S-VB Product Introduction
HFD5N50S-VB is a high-voltage single N-channel MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and is designed for high-voltage and high-current switching applications. Its maximum drain-source voltage is 650V, and it can work stably in a high-voltage environment. The threshold voltage of this MOSFET is 3.5V, ensuring reliable conduction at a lower gate-source voltage. The on-resistance of HFD5N50S-VB at a gate-source voltage of 10V is 1000mΩ, and the maximum drain current is 5A. Its high voltage resistance and low switching loss make it perform well in high-power applications.
HFD5N50S-VB is a high-voltage single N-channel MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and is designed for high-voltage and high-current switching applications. Its maximum drain-source voltage is 650V, and it can work stably in a high-voltage environment. The threshold voltage of this MOSFET is 3.5V, ensuring reliable conduction at a lower gate-source voltage. The on-resistance of HFD5N50S-VB at a gate-source voltage of 10V is 1000mΩ, and the maximum drain current is 5A. Its high voltage resistance and low switching loss make it perform well in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. HFD5N50S-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Channel configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and module examples
The high withstand voltage characteristics and stable performance of HFD5N50S-VB make it suitable for a variety of high voltage and high power applications. The following are some typical application fields:
1. **Power switch module**: In the high voltage power switch module, the 650V maximum drain-source voltage of HFD5N50S-VB can meet the switching requirements in high voltage environments, ensuring the safety and reliability of the power switch.
2. **Power converter**: This MOSFET can handle high voltage and high current in the power converter, providing stable switching performance, suitable for AC-DC and DC-DC conversion applications, and optimizing power conversion efficiency.
3. **Inverter system**: In the inverter system, the high withstand voltage characteristics of HFD5N50S-VB enable it to handle high voltage input, support efficient power conversion and stable output, and is suitable for use in solar inverters and other power inverters.
4. **Motor drive circuit**: Due to its high voltage resistance and high current handling capability, this MOSFET is suitable for motor drive circuits, which can reliably control the operation of the motor and improve the stability and efficiency of the system.
5. **High-voltage switch control**: In applications that require high-voltage switch control, the HFD5N50S-VB can be used as a high-voltage switch to meet the switching requirements in high-voltage environments and provide reliable current control and switching performance.
The design and performance of the HFD5N50S-VB enable it to excel in a variety of high-voltage, high-power switching and control applications, providing a stable and reliable solution for related applications.
The high withstand voltage characteristics and stable performance of HFD5N50S-VB make it suitable for a variety of high voltage and high power applications. The following are some typical application fields:
1. **Power switch module**: In the high voltage power switch module, the 650V maximum drain-source voltage of HFD5N50S-VB can meet the switching requirements in high voltage environments, ensuring the safety and reliability of the power switch.
2. **Power converter**: This MOSFET can handle high voltage and high current in the power converter, providing stable switching performance, suitable for AC-DC and DC-DC conversion applications, and optimizing power conversion efficiency.
3. **Inverter system**: In the inverter system, the high withstand voltage characteristics of HFD5N50S-VB enable it to handle high voltage input, support efficient power conversion and stable output, and is suitable for use in solar inverters and other power inverters.
4. **Motor drive circuit**: Due to its high voltage resistance and high current handling capability, this MOSFET is suitable for motor drive circuits, which can reliably control the operation of the motor and improve the stability and efficiency of the system.
5. **High-voltage switch control**: In applications that require high-voltage switch control, the HFD5N50S-VB can be used as a high-voltage switch to meet the switching requirements in high-voltage environments and provide reliable current control and switching performance.
The design and performance of the HFD5N50S-VB enable it to excel in a variety of high-voltage, high-power switching and control applications, providing a stable and reliable solution for related applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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