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HFD5N40-VB Product details
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HFD5N40-VB Product Introduction
HFD5N40-VB is a high-voltage single N-channel power MOSFET in a TO252 package. It is designed to handle drain-source voltages (VDS) up to 650V and supports gate-source voltages (VGS) up to ±30V. This MOSFET uses SJ_Multi-EPI technology, providing high breakdown voltage and good switching performance. It has a threshold voltage of 3.5V, an on-resistance (RDS(ON)) of 1000mΩ (at VGS = 10V), and can withstand a maximum drain current of 5A. The HFD5N40-VB is suitable for applications that require high voltage tolerance and high reliability.
HFD5N40-VB is a high-voltage single N-channel power MOSFET in a TO252 package. It is designed to handle drain-source voltages (VDS) up to 650V and supports gate-source voltages (VGS) up to ±30V. This MOSFET uses SJ_Multi-EPI technology, providing high breakdown voltage and good switching performance. It has a threshold voltage of 3.5V, an on-resistance (RDS(ON)) of 1000mΩ (at VGS = 10V), and can withstand a maximum drain current of 5A. The HFD5N40-VB is suitable for applications that require high voltage tolerance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HFD5N40-VB Detailed parameter description
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
7. **Drain current (ID)**: 5A
8. **Technology type**: SJ_Multi-EPI technology
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS = 10V
7. **Drain current (ID)**: 5A
8. **Technology type**: SJ_Multi-EPI technology
Domain and module applications：
Application fields and module examples of HFD5N40-VB
Due to its high voltage withstand capability and reliable switching performance, HFD5N40-VB is suitable for the following fields and modules:
1. **High voltage power switch**: The HFD5N40-VB can handle drain-source voltages up to 650V, making it ideal for high voltage power switch applications. For example, in high voltage DC-DC converters (DC-DC converters), this MOSFET can reliably switch high voltage power supplies to ensure system stability and safety.
2. **Power electronic converter**: In power electronic converters such as inverters and power modules, the high voltage withstand capability and high on-resistance of the HFD5N40-VB enable it to effectively control and convert high voltage currents. This is critical for high voltage switching in power electronic systems.
3. **Motor drive circuit**: In high voltage motor drive circuits, the HFD5N40-VB can be used as a switching element to handle the high voltage control requirements of the motor. Its high VDS value and low RDS(ON) make it suitable for high-voltage motor drive systems to provide reliable current control and power conversion.
4. **Protection circuit**: HFD5N40-VB is also suitable for high-voltage protection circuits such as overvoltage protection and current limiting circuits. Its high breakdown voltage and robust switching performance enable it to provide effective protection functions under high-voltage conditions to prevent circuit damage.
These application examples demonstrate the wide applicability of HFD5N40-VB in electronic systems that require high voltage handling and high reliability. Its high withstand voltage and good switching characteristics make it an ideal choice for high-voltage power supplies and power electronic modules.
Due to its high voltage withstand capability and reliable switching performance, HFD5N40-VB is suitable for the following fields and modules:
1. **High voltage power switch**: The HFD5N40-VB can handle drain-source voltages up to 650V, making it ideal for high voltage power switch applications. For example, in high voltage DC-DC converters (DC-DC converters), this MOSFET can reliably switch high voltage power supplies to ensure system stability and safety.
2. **Power electronic converter**: In power electronic converters such as inverters and power modules, the high voltage withstand capability and high on-resistance of the HFD5N40-VB enable it to effectively control and convert high voltage currents. This is critical for high voltage switching in power electronic systems.
3. **Motor drive circuit**: In high voltage motor drive circuits, the HFD5N40-VB can be used as a switching element to handle the high voltage control requirements of the motor. Its high VDS value and low RDS(ON) make it suitable for high-voltage motor drive systems to provide reliable current control and power conversion.
4. **Protection circuit**: HFD5N40-VB is also suitable for high-voltage protection circuits such as overvoltage protection and current limiting circuits. Its high breakdown voltage and robust switching performance enable it to provide effective protection functions under high-voltage conditions to prevent circuit damage.
These application examples demonstrate the wide applicability of HFD5N40-VB in electronic systems that require high voltage handling and high reliability. Its high withstand voltage and good switching characteristics make it an ideal choice for high-voltage power supplies and power electronic modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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