HFD3N80-VB Product details
Product introduction:
HFD3N80-VB is a high voltage N-type MOSFET in TO252 package. The maximum drain-source voltage (VDS) of this MOSFET is 800V, and it can work stably in a high voltage environment. It supports a gate-source voltage (VGS) of ±30V and has a high turn-on voltage, Vth of 3.5V. The on-resistance (RDS(ON)) of HFD3N80-VB is 2600mΩ, the measurement condition is VGS = 10V, and the drain current (ID) is rated at 2A. This MOSFET is manufactured using SJ_Multi-EPI technology, providing high voltage resistance and high reliability performance, and is suitable for application scenarios requiring high voltage and robust switching characteristics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS = 10V
- **Rated drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package form**: TO252
Domain and module applications:
The high voltage tolerance and reliability of HFD3N80-VB make it outstanding in many application fields:
1. **High-voltage switching power supply**: Due to its 800V drain-source voltage capability, HFD3N80-VB is an ideal choice for high-voltage switching power supplies such as AC-DC converters and DC-DC converters. It can stably switch in high-voltage environments and provide reliable power management solutions.
2. **Lighting control**: In high-voltage lighting systems, such as the drive circuit of high-voltage halogen lamps or metal halide lamps, HFD3N80-VB can be used to control the switch. Its high voltage tolerance and stable switching characteristics ensure the reliability and safety of the lighting system.
3. **Household appliances**: In household appliances that require high-voltage switching, such as power control modules of washing machines, refrigerators, and air conditioners, HFD3N80-VB can be used as the main switch. Its high voltage tolerance and good switching performance help improve the stability and durability of home appliances.
4. **Industrial Equipment**: HFD3N80-VB is also suitable for high-voltage switch control in industrial equipment, such as motor drives and power protection systems. In these applications, the high voltage characteristics and reliability of MOSFET ensure the normal operation and long-term stability of the equipment.
5. **Power Conversion**: In power conversion modules, HFD3N80-VB can be used as a high-voltage power switch to provide stable power conversion functions. Its high voltage tolerance and low on-resistance help improve the efficiency and reliability of power conversion.
These applications demonstrate the wide range of uses of HFD3N80-VB in high-voltage switching power supplies, lighting controls, home appliances, industrial equipment, and power conversion, ensuring stability and reliability in high-voltage environments.
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