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HFD2N90-VB Product details
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HFD2N90-VB MOSFET Product Introduction
HFD2N90-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage switching applications. It has a drain-source voltage (VDS) of up to 900V and a gate-source voltage (VGS) of ±30V, suitable for applications in high voltage environments. Its threshold voltage is 3.5V, the on-resistance is 2700mΩ (@ VGS=10V), and it supports a maximum leakage current (ID) of 2A. Using SJ_Multi-EPI technology, HFD2N90-VB can provide excellent high voltage performance and high efficiency, suitable for switching applications requiring high voltage and medium current.
HFD2N90-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage switching applications. It has a drain-source voltage (VDS) of up to 900V and a gate-source voltage (VGS) of ±30V, suitable for applications in high voltage environments. Its threshold voltage is 3.5V, the on-resistance is 2700mΩ (@ VGS=10V), and it supports a maximum leakage current (ID) of 2A. Using SJ_Multi-EPI technology, HFD2N90-VB can provide excellent high voltage performance and high efficiency, suitable for switching applications requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO252
- Surface mount package, suitable for high power density applications, providing good thermal management and reliability.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for application scenarios requiring single-channel switching.
- **VDS (drain-source voltage):** 900V
- The maximum voltage between the drain and the source, suitable for handling high voltage applications.
- **VGS (gate-source voltage):** ±30V
- The range of voltage that can be applied between the gate and the source, providing flexible drive voltage for the MOSFET.
- **Vth (threshold voltage):** 3.5V
- The minimum gate-source voltage required to turn on the MOSFET, ensuring that the MOSFET can be effectively switched at lower voltages.
- **RDS(ON):** 2700mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET in the on state. Higher on resistance is suitable for applications that require high voltage and can handle larger power loads.
- **ID(Drain Current):** 2A
- The maximum continuous current that the MOSFET can handle, suitable for medium current applications.
- **Technology:** SJ_Multi-EPI
- Using SJ_Multi-EPI technology, it provides high voltage capability and high efficiency, optimizing the current handling and power performance of the MOSFET.
- **Package:** TO252
- Surface mount package, suitable for high power density applications, providing good thermal management and reliability.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for application scenarios requiring single-channel switching.
- **VDS (drain-source voltage):** 900V
- The maximum voltage between the drain and the source, suitable for handling high voltage applications.
- **VGS (gate-source voltage):** ±30V
- The range of voltage that can be applied between the gate and the source, providing flexible drive voltage for the MOSFET.
- **Vth (threshold voltage):** 3.5V
- The minimum gate-source voltage required to turn on the MOSFET, ensuring that the MOSFET can be effectively switched at lower voltages.
- **RDS(ON):** 2700mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET in the on state. Higher on resistance is suitable for applications that require high voltage and can handle larger power loads.
- **ID(Drain Current):** 2A
- The maximum continuous current that the MOSFET can handle, suitable for medium current applications.
- **Technology:** SJ_Multi-EPI
- Using SJ_Multi-EPI technology, it provides high voltage capability and high efficiency, optimizing the current handling and power performance of the MOSFET.
Domain and module applications：
Application Examples
The high voltage and medium current capabilities of the HFD2N90-VB MOSFET make it suitable for multiple fields and modules:
1. **Power Switch:** Due to its high drain-source voltage of 900V, this MOSFET is very suitable for high-voltage power switching applications, such as high-voltage switching power supplies and power management systems. It can effectively handle high-voltage loads and ensure the stability and reliability of the power system.
2. **Lighting Control:** In high-voltage lighting control applications, such as power drivers for fluorescent lamps and LED lamps, the HFD2N90-VB is able to provide reliable switching performance under high voltage conditions, supporting the switching and regulation of various lighting systems.
3. **High Voltage Drive:** The HFD2N90-VB is suitable for electronic devices and systems that require high voltage drive, such as high-voltage motor drives and power converters. It can work stably at high voltages to ensure efficient operation of the equipment.
4. **Motor Control:** This MOSFET provides reliable switching capabilities in high voltage motor control applications, such as high voltage switching in motor drive systems. It can handle switching requirements in high voltage environments and is suitable for industrial and automotive motor control systems.
The HFD2N90-VB MOSFET excels in power switching, lighting control, high voltage drive and motor control with its high voltage handling capability and medium current capability.
The high voltage and medium current capabilities of the HFD2N90-VB MOSFET make it suitable for multiple fields and modules:
1. **Power Switch:** Due to its high drain-source voltage of 900V, this MOSFET is very suitable for high-voltage power switching applications, such as high-voltage switching power supplies and power management systems. It can effectively handle high-voltage loads and ensure the stability and reliability of the power system.
2. **Lighting Control:** In high-voltage lighting control applications, such as power drivers for fluorescent lamps and LED lamps, the HFD2N90-VB is able to provide reliable switching performance under high voltage conditions, supporting the switching and regulation of various lighting systems.
3. **High Voltage Drive:** The HFD2N90-VB is suitable for electronic devices and systems that require high voltage drive, such as high-voltage motor drives and power converters. It can work stably at high voltages to ensure efficient operation of the equipment.
4. **Motor Control:** This MOSFET provides reliable switching capabilities in high voltage motor control applications, such as high voltage switching in motor drive systems. It can handle switching requirements in high voltage environments and is suitable for industrial and automotive motor control systems.
The HFD2N90-VB MOSFET excels in power switching, lighting control, high voltage drive and motor control with its high voltage handling capability and medium current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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