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HFD13N10-VB Product details
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Product Introduction
**HFD13N10-VB** is a single N-channel MOSFET in TO252 package, using Trench technology. This MOSFET is designed for medium and high voltage applications, providing stable switching performance and efficient power management. Its high drain-source voltage and moderate on-resistance make it particularly suitable for power management and power conversion applications that need to handle medium currents.
**HFD13N10-VB** is a single N-channel MOSFET in TO252 package, using Trench technology. This MOSFET is designed for medium and high voltage applications, providing stable switching performance and efficient power management. Its high drain-source voltage and moderate on-resistance make it particularly suitable for power management and power conversion applications that need to handle medium currents.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ @ VGS = 10V
- **Drain current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
The characteristics of **HFD13N10-VB** enable it to perform well in the following fields and modules:
1. **Power management**: Applied in DC-DC converters and power switch modules, the medium-to-high voltage withstand capability and moderate on-resistance of this MOSFET enable it to effectively handle the current requirements in power switching and power conversion. Its high current carrying capacity (15A) also supports stable operation under high load conditions.
2. **Motor drive**: Used for power switching and control in motor drive modules. Its high drain-source voltage and high current capability can meet the driving needs of motors and provide reliable switching performance and power management in motor control applications.
3. **Industrial automation**: Suitable for switching elements in industrial control systems, such as automation equipment and industrial power modules. Its high current capability and high voltage resistance characteristics enable it to operate stably in various industrial applications and improve system reliability.
4. **Consumer Electronics**: Used in high-performance consumer electronic devices, such as computer power management and consumer electronic power modules. Its medium on-resistance and good current handling capabilities support stable operation of the device and optimize power management.
5. **Automotive Electronics**: Used in automotive power management and motor control systems, it can handle high voltage and high current loads, provide stable switching performance and high-efficiency power conversion, and ensure the reliability and efficiency of automotive electronic systems.
**HFD13N10-VB** is designed to have efficient power management and stable switching performance in these applications, making it a reliable choice for medium and high voltage applications.
The characteristics of **HFD13N10-VB** enable it to perform well in the following fields and modules:
1. **Power management**: Applied in DC-DC converters and power switch modules, the medium-to-high voltage withstand capability and moderate on-resistance of this MOSFET enable it to effectively handle the current requirements in power switching and power conversion. Its high current carrying capacity (15A) also supports stable operation under high load conditions.
2. **Motor drive**: Used for power switching and control in motor drive modules. Its high drain-source voltage and high current capability can meet the driving needs of motors and provide reliable switching performance and power management in motor control applications.
3. **Industrial automation**: Suitable for switching elements in industrial control systems, such as automation equipment and industrial power modules. Its high current capability and high voltage resistance characteristics enable it to operate stably in various industrial applications and improve system reliability.
4. **Consumer Electronics**: Used in high-performance consumer electronic devices, such as computer power management and consumer electronic power modules. Its medium on-resistance and good current handling capabilities support stable operation of the device and optimize power management.
5. **Automotive Electronics**: Used in automotive power management and motor control systems, it can handle high voltage and high current loads, provide stable switching performance and high-efficiency power conversion, and ensure the reliability and efficiency of automotive electronic systems.
**HFD13N10-VB** is designed to have efficient power management and stable switching performance in these applications, making it a reliable choice for medium and high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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