Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±80V |
|
1.8/-1.7V |
5.3/-3.9A |
|
|
46/100mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±80V |
|
1.8/-1.7V |
5.3/-3.9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±80V |
|
1.8/-1.7V |
5.3/-3.9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
HAT3032R-VB Detailed parameter description
1. **Package form**: SOP8
2. **Configuration**: Dual N+P channel
3. **Drain-source voltage (VDS)**: ±80V
4. **Gate-source voltage (VGS)**: ±20V
5. **N-channel**:
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 59mΩ @ VGS = 4.5V
- 46mΩ @ VGS = 10V
- **Drain current (ID)**: 5.3A
6. **P-channel**:
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 126mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **Drain Current (ID)**: -3.9A
7. **Technology Type**: Trench Technology
Domain and module applications：
Application fields and module examples of HAT3032R-VB
The dual N+P channel configuration of HAT3032R-VB enables it to excel in the following fields and modules:
1. **Power management system**: In power management systems, HAT3032R-VB is able to effectively handle power switching and current control. Its dual MOSFET configuration enables it to achieve efficient DC-DC conversion and power distribution, suitable for high voltage and medium current power modules.
2. **H-bridge drive circuit**: HAT3032R-VB is suitable for H-bridge motor drive circuits, a configuration that enables bidirectional control of motors. Its N+P channel MOSFET is able to provide good switching performance and reduce power loss through low on-resistance, improving motor drive efficiency.
3. **High voltage switch**: Due to its ability to handle drain-source voltages up to ±80V, HAT3032R-VB is suitable for high voltage switching applications such as high voltage power switching and high voltage load control. Its dual MOSFET design allows efficient current switching under high voltage conditions.
4. **Protection circuits and load switches**: In applications requiring high voltage protection and load switching, HAT3032R-VB is able to provide reliable protection functions. Its N+P channel configuration can achieve precise current control and overvoltage protection, ensuring the stability and safety of the system.
These application examples show that HAT3032R-VB has a wide range of application prospects in switching circuits that require high voltage and medium current handling. Its dual MOSFET design and low on-resistance make it suitable for multiple fields such as high-efficiency power management and motor drive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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