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HAT3006RJ-VB Product details

Product introduction:

1. HAT3006RJ-VB Product Introduction

HAT3006RJ-VB is a dual-channel N+P channel MOSFET in SOP8 package. This MOSFET contains an N channel and a P channel MOSFET, supporting drain-source voltage (VDS) up to ±30V and gate-source voltage (VGS) of ±20V. Its turn-on voltage (Vth) is 1.6V (N channel) and -1.7V (P channel). Using Trench technology, it provides a lower on-resistance (RDS(ON)), specifically 24mΩ @ VGS=4.5V and 18mΩ @ VGS=10V for N channel; 50mΩ @ VGS=4.5V and 40mΩ @ VGS=10V for P channel. The maximum drain current of each channel is ±8A. The dual-channel N+P channel design of HAT3006RJ-VB is suitable for bidirectional switching applications, providing a flexible solution for various power management and switch control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
2. HAT3006RJ-VB Detailed parameter description

- **Package type (Package)**: SOP8
- **Channel configuration (Configuration)**: Dual N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Through voltage (Vth)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- P channel:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Drain current (ID)**: ±8A
- **Technology type**: Trench technology

Domain and module applications:

3. HAT3006RJ-VB application fields and module examples

1. **H-bridge circuit**: The dual N+P channel configuration of HAT3006RJ-VB makes it very suitable for bidirectional current control in H-bridge circuits. This configuration can achieve bidirectional control of motor drive systems, improve the flexibility and efficiency of motor drive, and is very suitable for DC motor and stepper motor control.

2. **Power switch**: In power switch applications, the high voltage handling capability and low on-resistance of HAT3006RJ-VB make it suitable for efficient power switch modules. Its dual-channel design allows the switching functions of N-channel and P-channel to be implemented in one package, thereby simplifying the design of power management systems and improving system reliability and performance.

3. **Inverter application**: For inverter applications, the ±30V drain-source voltage and dual N+P channel design of HAT3006RJ-VB enable it to effectively handle positive and negative currents in the power conversion process. Its low on-resistance helps reduce power losses and is suitable for solar inverters and other power conversion equipment.

4. **Automotive Electronics**: In automotive electronic systems, HAT3006RJ-VB can be used for high-voltage power switching and power management applications. Its dual-channel configuration enables it to handle the bidirectional switching needs in automotive power systems and is suitable for battery management systems and motor control modules.

The dual-channel N+P channel design and high voltage handling capabilities of HAT3006RJ-VB enable it to perform well in a variety of high-efficiency switching and power management applications, and is particularly suitable for applications that require bidirectional current control and high voltage handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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