Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
HAT3004RJ-VB Detailed parameter description
1. **Package form**: SOP8
2. **Configuration**: Dual N+P channel
3. **Drain-source voltage (VDS)**: ±30V
4. **Gate-source voltage (VGS)**: ±20V
5. **N-channel**:
- **Threshold voltage (Vth)**: 1.6V
- **On-resistance (RDS(ON))**:
- 24mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
- **Drain current (ID)**: 8A
6. **P-channel**:
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
- **Drain Current (ID)**: 8A
7. **Technology Type**: Trench Technology
Domain and module applications:
Application fields and module examples of HAT3004RJ-VB
Due to its dual N+P channel configuration and low on-resistance, HAT3004RJ-VB is suitable for the following fields and modules:
1. **Power management system**: HAT3004RJ-VB is ideal for high-efficiency power management systems such as DC-DC converters and power switches. In these applications, the combination of N-channel and P-channel MOSFETs can provide efficient switching control, reduce power consumption and improve system efficiency.
2. **H-bridge drive circuit**: In the H-bridge motor drive circuit, the dual MOSFET configuration of HAT3004RJ-VB enables bidirectional current flow and efficient motor control. Its low on-resistance helps reduce power loss during motor drive and ensures stable operation of the motor.
3. **Inverter and electric vehicle system**: In inverter and electric vehicle systems, HAT3004RJ-VB is able to handle high current and high power loads. Its dual MOSFET design enables the circuit to achieve efficient power conversion and current control, which is suitable for motor drive and energy conversion systems in electric vehicles.
4. **Load switch and protection circuit**: HAT3004RJ-VB can be used in load switch and protection circuits. In these applications, its high switching efficiency and low on-resistance can provide reliable load control and overcurrent protection, ensuring the safety and stability of the circuit.
These application examples demonstrate the wide applicability of HAT3004RJ-VB in a variety of electronic systems that require efficient switching and low power consumption, especially in high-efficiency applications that require dual MOSFET configurations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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