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HAT3004RJ-VB Product details

Product introduction:

HAT3004RJ-VB Product Introduction

HAT3004RJ-VB is a high-performance dual N+P channel power MOSFET in SOP8 package. This MOSFET supports drain-source voltage (VDS) up to ±30V and gate-source voltage (VGS) of ±20V. Its N-channel and P-channel MOSFETs have threshold voltages of 1.6V and -1.7V, respectively, and can switch effectively at lower gate-source voltages. HAT3004RJ-VB uses Trench technology to provide low on-resistance, 24mΩ (at VGS = 4.5V) and 18mΩ (at VGS = 10V) for N-channel, 50mΩ (at VGS = 4.5V) and 40mΩ (at VGS = 10V) for P-channel, and a drain current of ±8A. This high-efficiency design enables it to perform well in applications that require high switching efficiency and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
HAT3004RJ-VB Detailed parameter description

1. **Package form**: SOP8
2. **Configuration**: Dual N+P channel
3. **Drain-source voltage (VDS)**: ±30V
4. **Gate-source voltage (VGS)**: ±20V
5. **N-channel**:
- **Threshold voltage (Vth)**: 1.6V
- **On-resistance (RDS(ON))**:
- 24mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
- **Drain current (ID)**: 8A
6. **P-channel**:
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
- **Drain Current (ID)**: 8A
7. **Technology Type**: Trench Technology

Domain and module applications:

Application fields and module examples of HAT3004RJ-VB

Due to its dual N+P channel configuration and low on-resistance, HAT3004RJ-VB is suitable for the following fields and modules:

1. **Power management system**: HAT3004RJ-VB is ideal for high-efficiency power management systems such as DC-DC converters and power switches. In these applications, the combination of N-channel and P-channel MOSFETs can provide efficient switching control, reduce power consumption and improve system efficiency.

2. **H-bridge drive circuit**: In the H-bridge motor drive circuit, the dual MOSFET configuration of HAT3004RJ-VB enables bidirectional current flow and efficient motor control. Its low on-resistance helps reduce power loss during motor drive and ensures stable operation of the motor.

3. **Inverter and electric vehicle system**: In inverter and electric vehicle systems, HAT3004RJ-VB is able to handle high current and high power loads. Its dual MOSFET design enables the circuit to achieve efficient power conversion and current control, which is suitable for motor drive and energy conversion systems in electric vehicles.

4. **Load switch and protection circuit**: HAT3004RJ-VB can be used in load switch and protection circuits. In these applications, its high switching efficiency and low on-resistance can provide reliable load control and overcurrent protection, ensuring the safety and stability of the circuit.

These application examples demonstrate the wide applicability of HAT3004RJ-VB in a variety of electronic systems that require efficient switching and low power consumption, especially in high-efficiency applications that require dual MOSFET configurations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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