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HAT2283H-EL-E-VB Product details
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HAT2283H-EL-E-VB MOSFET Product Introduction
HAT2283H-EL-E-VB is a high-performance single N-channel MOSFET in a SOT669 package, designed for high voltage and high current switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and its threshold voltage is as low as 1.4V, ensuring efficient switching at low gate voltages. Its on-resistance is 7.2mΩ (@ VGS=4.5V) and 6mΩ (@ VGS=10V), supporting a leakage current (ID) of up to 90A. Using advanced trench technology, the HAT2283H-EL-E-VB performs well in high voltage and high current applications.
HAT2283H-EL-E-VB is a high-performance single N-channel MOSFET in a SOT669 package, designed for high voltage and high current switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, and its threshold voltage is as low as 1.4V, ensuring efficient switching at low gate voltages. Its on-resistance is 7.2mΩ (@ VGS=4.5V) and 6mΩ (@ VGS=10V), supporting a leakage current (ID) of up to 90A. Using advanced trench technology, the HAT2283H-EL-E-VB performs well in high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package:** SOT669
- Small surface mount package suitable for space-constrained electronic devices, providing efficient integration and excellent thermal management.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for applications requiring single-channel switching.
- **VDS (drain-source voltage):** 80V
- The maximum voltage between the drain and the source, suitable for applications that handle medium to high voltages.
- **VGS (gate-source voltage):** ±20V
- The range of voltage that can be applied between the gate and the source, providing flexible drive voltages for the MOSFET.
- **Vth (threshold voltage):** 1.4V
- The minimum gate-source voltage required to turn on the MOSFET, supporting effective switching under low voltage conditions.
- **RDS(ON):** 7.2mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET in the on state, providing low power consumption and high efficiency.
- **ID (Drain Current):** 90A
- The maximum continuous current that the MOSFET can handle, suitable for high current applications.
- **Technology:** Trench Technology
- Using advanced trench technology, it provides low on-resistance and high efficiency, optimizing the operating efficiency and power handling capability of the MOSFET.
- **Package:** SOT669
- Small surface mount package suitable for space-constrained electronic devices, providing efficient integration and excellent thermal management.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for applications requiring single-channel switching.
- **VDS (drain-source voltage):** 80V
- The maximum voltage between the drain and the source, suitable for applications that handle medium to high voltages.
- **VGS (gate-source voltage):** ±20V
- The range of voltage that can be applied between the gate and the source, providing flexible drive voltages for the MOSFET.
- **Vth (threshold voltage):** 1.4V
- The minimum gate-source voltage required to turn on the MOSFET, supporting effective switching under low voltage conditions.
- **RDS(ON):** 7.2mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET in the on state, providing low power consumption and high efficiency.
- **ID (Drain Current):** 90A
- The maximum continuous current that the MOSFET can handle, suitable for high current applications.
- **Technology:** Trench Technology
- Using advanced trench technology, it provides low on-resistance and high efficiency, optimizing the operating efficiency and power handling capability of the MOSFET.
Domain and module applications：
Application examples
The high performance characteristics of HAT2283H-EL-E-VB MOSFET make it suitable for multiple fields and modules:
1. **Power management system:** Due to its high voltage and high current handling capabilities, this MOSFET is ideal for power management systems such as high voltage DC-DC converters, switching power supplies, and voltage regulation modules. It can effectively manage power flow and improve the overall efficiency and stability of the system.
2. **Motor control:** In motor drive applications, HAT2283H-EL-E-VB is able to handle high currents and provide low on-resistance, supporting efficient and smooth motor control. This is especially important for motor control systems in industrial automation, power tools, and electric vehicles.
3. **Switching power supply:** The high voltage and high current capabilities of this MOSFET make it suitable for high-power switching power supply designs, including high-voltage load switches and current overload protection circuits. It is able to provide stable switching performance under high power conditions to ensure system reliability.
4. **Automotive Electronics:** In automotive electronics applications, HAT2283H-EL-E-VB can be used for power switching and load control, such as electric seat control and vehicle power management systems. Its high current handling capability and low on-resistance help improve the efficiency and reliability of automotive electronic systems.
HAT2283H-EL-E-VB MOSFET excels in power management, motor control, switching power supplies and automotive electronics applications due to its high voltage, high current capability and low on-resistance.
The high performance characteristics of HAT2283H-EL-E-VB MOSFET make it suitable for multiple fields and modules:
1. **Power management system:** Due to its high voltage and high current handling capabilities, this MOSFET is ideal for power management systems such as high voltage DC-DC converters, switching power supplies, and voltage regulation modules. It can effectively manage power flow and improve the overall efficiency and stability of the system.
2. **Motor control:** In motor drive applications, HAT2283H-EL-E-VB is able to handle high currents and provide low on-resistance, supporting efficient and smooth motor control. This is especially important for motor control systems in industrial automation, power tools, and electric vehicles.
3. **Switching power supply:** The high voltage and high current capabilities of this MOSFET make it suitable for high-power switching power supply designs, including high-voltage load switches and current overload protection circuits. It is able to provide stable switching performance under high power conditions to ensure system reliability.
4. **Automotive Electronics:** In automotive electronics applications, HAT2283H-EL-E-VB can be used for power switching and load control, such as electric seat control and vehicle power management systems. Its high current handling capability and low on-resistance help improve the efficiency and reliability of automotive electronic systems.
HAT2283H-EL-E-VB MOSFET excels in power management, motor control, switching power supplies and automotive electronics applications due to its high voltage, high current capability and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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