Product introduction:
HAT2280R-VB MOSFET Product Introduction
The HAT2280R-VB is a high-performance single N-channel MOSFET in a SOP8 package. It is designed for high current and high-efficiency applications, providing excellent switching performance and low on-resistance. The drain-source voltage (VDS) of this MOSFET is 30V, and the gate-source voltage (VGS) allows a high voltage range of ±20V, enabling stable operation under various voltage conditions. The gate threshold voltage (Vth) of the HAT2280R-VB is 1.7V, enabling efficient switching at a lower control voltage. Using Trench technology, this MOSFET achieves a very low on-resistance (RDS(ON)), which is 11mΩ at a VGS of 4.5V and 8mΩ at a VGS of 10V, supporting a continuous drain current (ID) of up to 13A. This design makes it ideal for applications requiring high current and low power consumption.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
HAT2280R-VB Detailed parameter description
- **Package type (Package): ** SOP8
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 1.7V
- **On-resistance (RDS(ON)): **
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Continuous drain current (ID): ** 13A
- **Technology type (Technology): ** Trench technology
Domain and module applications:
HAT2280R-VB Application Fields and Module Examples
1. **Power Management:** HAT2280R-VB performs well in power management systems, especially in DC-DC converters and power path management modules. Its low on-resistance and high current capability enable it to effectively reduce power consumption and improve system efficiency, making it suitable for high power density power management applications.
2. **Motor Drive:** In motor drive applications, such as stepper motors and DC motor drivers, the high current handling capability and low on-resistance of HAT2280R-VB enable it to provide stable current support. This feature is critical to the control accuracy of the motor and the overall efficiency of the system, and is suitable for high current and high efficiency motor drive systems.
3. **Load Switch:** Due to its low on-resistance and high current capability, HAT2280R-VB is an ideal choice for load switch applications. It can switch efficiently under high load and high current conditions, making it suitable for battery management systems and high power switch modules such as load switching and current control applications.
4. **Consumer Electronics:** In consumer electronic devices such as smartphones, tablets and portable devices, the compact package and high efficiency of the HAT2280R-VB make it an ideal choice for power path control and battery management. Its high current capability and low power consumption can help improve the overall performance and battery life of the device, especially in high power demand situations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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