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HAT2266H-EL-E-VB Product details
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Product Introduction
HAT2266H-EL-E-VB is a high-performance N-channel MOSFET in SOT669 package based on advanced Trench technology. It supports drain-source voltage up to 60V and continuous drain current of 64A with low on-resistance. Designed for high current and high voltage applications, this MOSFET provides excellent switching performance and high efficiency, and is particularly suitable for electronic systems that need to handle high current and high power.
HAT2266H-EL-E-VB is a high-performance N-channel MOSFET in SOT669 package based on advanced Trench technology. It supports drain-source voltage up to 60V and continuous drain current of 64A with low on-resistance. Designed for high current and high voltage applications, this MOSFET provides excellent switching performance and high efficiency, and is particularly suitable for electronic systems that need to handle high current and high power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | 6.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: HAT2266H-EL-E-VB
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1V ~ 3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 64A
- **Technology**: Trench
- **Model**: HAT2266H-EL-E-VB
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1V ~ 3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 64A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management system**: The low on-resistance and high current handling capability of HAT2266H-EL-E-VB make it ideal for use in high-efficiency power management systems such as DC-DC converters and power switches. Its excellent switching performance helps optimize power conversion efficiency and reduce energy loss and heat generation.
2. **Electric vehicle (EV) battery management**: In the battery management system of electric vehicles, HAT2266H-EL-E-VB is able to handle high voltage and high current charging and discharging requirements. Its high current capability and low on-resistance help improve system efficiency and support long battery life and reliability.
3. **Industrial motor drive**: This MOSFET is suitable for industrial motor drive applications such as motor control systems and servo drives. Its high current capability and high voltage tolerance enable it to operate stably under high load conditions, providing efficient motor control solutions.
4. **High Power Load Switch**: HAT2266H-EL-E-VB is also suitable for high power load switching, such as high power LED drivers and power amplifiers. Its low on-resistance and high current capability can effectively handle high power loads and improve the overall performance and efficiency of the system.
With its high voltage, high current handling capability and low on-resistance, HAT2266H-EL-E-VB provides excellent performance for a variety of high-performance applications and is widely used in power management, battery management, industrial drives and high power load switching.
1. **Power management system**: The low on-resistance and high current handling capability of HAT2266H-EL-E-VB make it ideal for use in high-efficiency power management systems such as DC-DC converters and power switches. Its excellent switching performance helps optimize power conversion efficiency and reduce energy loss and heat generation.
2. **Electric vehicle (EV) battery management**: In the battery management system of electric vehicles, HAT2266H-EL-E-VB is able to handle high voltage and high current charging and discharging requirements. Its high current capability and low on-resistance help improve system efficiency and support long battery life and reliability.
3. **Industrial motor drive**: This MOSFET is suitable for industrial motor drive applications such as motor control systems and servo drives. Its high current capability and high voltage tolerance enable it to operate stably under high load conditions, providing efficient motor control solutions.
4. **High Power Load Switch**: HAT2266H-EL-E-VB is also suitable for high power load switching, such as high power LED drivers and power amplifiers. Its low on-resistance and high current capability can effectively handle high power loads and improve the overall performance and efficiency of the system.
With its high voltage, high current handling capability and low on-resistance, HAT2266H-EL-E-VB provides excellent performance for a variety of high-performance applications and is widely used in power management, battery management, industrial drives and high power load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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