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HAT2261H-VB Product details

Product introduction:

1. HAT2261H-VB Product Introduction

HAT2261H-VB is a high-performance single N-channel MOSFET in a SOT669 package with excellent current handling capability and low on-resistance. Its maximum drain-source voltage is 30V and the gate voltage rating range is ±20V. The threshold voltage (Vth) of this MOSFET is 0.8V, and it can start at very low gate-source voltages. The on-resistance (RDS(ON)) of HAT2261H-VB at a gate-source voltage of 4.5V is 3.36mΩ, and it drops to 2.8mΩ at a gate-source voltage of 10V, showing extremely low switching losses and efficient current control. The maximum drain current reaches 90A, and Trench technology is used to ensure excellent performance and reliability in high-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT669 Single-N 30V 0.8V 90A 2.8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT669 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT669 Single-N 30V 0.8V 90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT669 Single-N 30V 0.8V 90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT669 Single-N
2. HAT2261H-VB Detailed parameter description

- **Package type**: SOT669
- **Channel configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 90A
- **Technology type**: Trench

Domain and module applications:

3. Application fields and module examples

The high current capability and extremely low on-resistance of HAT2261H-VB make it suitable for various electronic applications requiring high efficiency and high current. Here are some typical application fields:

1. **High-efficiency power management**: Due to its low on-resistance and high current handling capability, HAT2261H-VB is an ideal choice in power management systems, which can significantly reduce power loss and improve overall energy efficiency. It is suitable for power switches and power distribution modules.

2. **High-power DC-DC converter**: In DC-DC converters, HAT2261H-VB can provide efficient power conversion and support high current requirements. It is suitable for high-power power conversion and stable current output.

3. **Motor drive control**: This MOSFET can be used in motor drive systems to provide high current control, adapt to the high current requirements during motor startup and operation, and ensure the stability and reliability of the motor.

4. **Load switch application**: The extremely low on-resistance of HAT2261H-VB makes it very suitable for use as a load switch, which can effectively control high current loads, optimize load management and improve the overall performance of the system.

The superior performance of HAT2261H-VB makes it excel in high current and high power applications, providing an efficient solution for various power management and switching systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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