Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package:** SOP8
- Small surface mount package, suitable for space-constrained electronic devices, providing efficient integration and excellent thermal management.
- **Configuration:** Dual N-channel
- Dual N-channel MOSFET configuration, suitable for applications requiring multi-channel switching.
- **VDS (drain-source voltage):** 30V
- The maximum voltage between the drain and the source, suitable for applications that handle medium voltages.
- **VGS (gate-source voltage):** ±20V
- The range of voltage that can be applied between the gate and the source, providing flexible drive voltages for the MOSFET.
- **Vth (threshold voltage):** 1.7V
- The minimum gate-source voltage required to turn on the MOSFET, ensuring effective switching under low voltage conditions.
- **RDS(ON):** 20mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET in the on state, providing low power consumption and high efficiency.
- **ID (Drain Current):** 8.5A
- The maximum continuous current that the MOSFET can handle, suitable for medium and high current applications.
- **Technology:** Trench Technology
- Using advanced trench technology, it provides low on-resistance and high efficiency, optimizing the operating efficiency and power handling capability of the MOSFET.
Domain and module applications：
Application examples
The high performance characteristics of HAT2219R-VB MOSFET make it suitable for multiple fields and modules:
1. **Power management system:** Due to its dual-channel configuration and low on-resistance, this MOSFET is very suitable for use in power management systems such as DC-DC converters, switching power supplies, and voltage regulation modules. The dual N-channel configuration allows for greater flexibility and efficiency in the power conversion process.
2. **Motor control:** In motor drive applications, HAT2219R-VB is able to handle medium currents and provide low on-resistance, helping to achieve efficient and smooth motor control. This is especially important for motor control systems in industrial automation, power tools, and consumer electronics.
3. **Switching power supply:** The dual-channel configuration of this MOSFET makes it suitable for switching power supply designs, including high-power load switches and current overload protection circuits. The dual-channel structure can better manage current flow and improve system stability and reliability.
4. **Automotive Electronics:** In automotive electronics applications, HAT2219R-VB can be used for power switching and load control, such as on-board power management systems and electric seat controls. Its dual N-channel configuration and high current handling capability help improve the efficiency and reliability of automotive electronic systems.
HAT2219R-VB MOSFET excels in power management, motor control, switching power supplies, automotive electronics and other application fields with its efficient switching performance, low on-resistance and dual-channel design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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