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HAT2175H-EL-E-VB Product details
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1. HAT2175H-EL-E-VB Product Introduction
HAT2175H-EL-E-VB is a high-voltage, high-current single-channel N-channel MOSFET in SOT669 package. This MOSFET has a drain-source voltage (VDS) of up to 100V and a gate-source voltage (VGS) range of ±20V. Its turn-on voltage (Vth) is 1.4V, and it uses Trench technology to provide a lower on-resistance (RDS(ON)), specifically 13.92mΩ @ VGS=4.5V and 11.6mΩ @ VGS=10V. This MOSFET can handle drain currents up to 69A and is suitable for power management and power switching applications that require high voltage and high current handling capabilities. Its compact SOT669 package enables it to provide efficient performance even in space-constrained applications.
HAT2175H-EL-E-VB is a high-voltage, high-current single-channel N-channel MOSFET in SOT669 package. This MOSFET has a drain-source voltage (VDS) of up to 100V and a gate-source voltage (VGS) range of ±20V. Its turn-on voltage (Vth) is 1.4V, and it uses Trench technology to provide a lower on-resistance (RDS(ON)), specifically 13.92mΩ @ VGS=4.5V and 11.6mΩ @ VGS=10V. This MOSFET can handle drain currents up to 69A and is suitable for power management and power switching applications that require high voltage and high current handling capabilities. Its compact SOT669 package enables it to provide efficient performance even in space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. HAT2175H-EL-E-VB Detailed parameter description
- **Package type (Package)**: SOT669
- **Channel configuration (Configuration)**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
- **Drain current (ID)**: 69A
- **Technology type (Technology)**: Trench technology
- **Package type (Package)**: SOT669
- **Channel configuration (Configuration)**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS=4.5V
- 11.6mΩ @ VGS=10V
- **Drain current (ID)**: 69A
- **Technology type (Technology)**: Trench technology
Domain and module applications：
3. HAT2175H-EL-E-VB application areas and module examples
1. **High voltage power management**: The high drain-source voltage (100V) and high current capability (69A) of the HAT2175H-EL-E-VB make it particularly suitable for high voltage power management applications, such as efficient DC-DC converters and power switches. These applications require MOSFETs to maintain low on-resistance at high voltages, thereby improving power conversion efficiency and reducing power consumption and heat generation.
2. **Power inverter**: In power inverter systems, the HAT2175H-EL-E-VB can handle voltages up to 100V and currents up to 69A, making it suitable for solar inverters and other occasions that require high power density and high voltage handling. Its low on-resistance and high current handling capabilities help improve the efficiency and reliability of the inverter.
3. **Automotive Electronics**: In automotive electronic systems, the HAT2175H-EL-E-VB can be used in battery management systems, power switches, and other high-voltage power switch modules. Its high current capability and high voltage handling capabilities enable it to meet the power density and reliability requirements of modern automotive electrical systems.
4. **Consumer Electronics and Industrial Applications**: In high-power consumer electronic devices and industrial applications, such as high-power LED drives and motor control, the high current carrying capacity and small package of the HAT2175H-EL-E-VB can provide reliable switching performance while meeting the needs of high power and high efficiency.
The high voltage and high current characteristics of the HAT2175H-EL-E-VB enable it to perform well in a variety of high-power, high-voltage applications, especially for occasions that require efficient switching and small packages.
1. **High voltage power management**: The high drain-source voltage (100V) and high current capability (69A) of the HAT2175H-EL-E-VB make it particularly suitable for high voltage power management applications, such as efficient DC-DC converters and power switches. These applications require MOSFETs to maintain low on-resistance at high voltages, thereby improving power conversion efficiency and reducing power consumption and heat generation.
2. **Power inverter**: In power inverter systems, the HAT2175H-EL-E-VB can handle voltages up to 100V and currents up to 69A, making it suitable for solar inverters and other occasions that require high power density and high voltage handling. Its low on-resistance and high current handling capabilities help improve the efficiency and reliability of the inverter.
3. **Automotive Electronics**: In automotive electronic systems, the HAT2175H-EL-E-VB can be used in battery management systems, power switches, and other high-voltage power switch modules. Its high current capability and high voltage handling capabilities enable it to meet the power density and reliability requirements of modern automotive electrical systems.
4. **Consumer Electronics and Industrial Applications**: In high-power consumer electronic devices and industrial applications, such as high-power LED drives and motor control, the high current carrying capacity and small package of the HAT2175H-EL-E-VB can provide reliable switching performance while meeting the needs of high power and high efficiency.
The high voltage and high current characteristics of the HAT2175H-EL-E-VB enable it to perform well in a variety of high-power, high-voltage applications, especially for occasions that require efficient switching and small packages.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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