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HAT2171H-EL-E-VB Product details
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Product Introduction
HAT2171H-EL-E-VB is a high-performance N-channel MOSFET in SOT669 package and based on advanced Trench technology. It has a high drain-source voltage (40V) and very low on-resistance, supporting a continuous drain current of up to 100A. This makes the HAT2171H-EL-E-VB excel in applications that require high efficiency and high current handling, especially for high-power and high-density electronic devices.
HAT2171H-EL-E-VB is a high-performance N-channel MOSFET in SOT669 package and based on advanced Trench technology. It has a high drain-source voltage (40V) and very low on-resistance, supporting a continuous drain current of up to 100A. This makes the HAT2171H-EL-E-VB excel in applications that require high efficiency and high current handling, especially for high-power and high-density electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: HAT2171H-EL-E-VB
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: HAT2171H-EL-E-VB
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High-efficiency power management**: HAT2171H-EL-E-VB is suitable for high-efficiency power management systems such as high-power DC-DC converters and power switch modules. Its low on-resistance and high current capability can effectively reduce power consumption and improve the overall efficiency of the system.
2. **Electric vehicle (EV) drive control**: In the motor drive and battery management system of electric vehicles, this MOSFET can provide high current support and stable operation, which helps to improve the power system performance and battery life of electric vehicles.
3. **Industrial power switch**: In industrial applications, the high current handling capability and compact package of HAT2171H-EL-E-VB make it suitable for use as load switch, motor drive and other high-power power switch applications. Its high efficiency helps to cope with high loads and harsh working environments.
4. **Computer and Server Power**: For high-performance computers and servers, HAT2171H-EL-E-VB can be used as a power management component to improve power efficiency and reduce heat generation. Its excellent switching performance is particularly important for high-power density computing platforms.
With its high voltage, high current capability and low on-resistance, HAT2171H-EL-E-VB provides a reliable solution for a variety of high-power and high-efficiency applications, meeting the high performance and efficiency requirements of modern electronic devices.
1. **High-efficiency power management**: HAT2171H-EL-E-VB is suitable for high-efficiency power management systems such as high-power DC-DC converters and power switch modules. Its low on-resistance and high current capability can effectively reduce power consumption and improve the overall efficiency of the system.
2. **Electric vehicle (EV) drive control**: In the motor drive and battery management system of electric vehicles, this MOSFET can provide high current support and stable operation, which helps to improve the power system performance and battery life of electric vehicles.
3. **Industrial power switch**: In industrial applications, the high current handling capability and compact package of HAT2171H-EL-E-VB make it suitable for use as load switch, motor drive and other high-power power switch applications. Its high efficiency helps to cope with high loads and harsh working environments.
4. **Computer and Server Power**: For high-performance computers and servers, HAT2171H-EL-E-VB can be used as a power management component to improve power efficiency and reduce heat generation. Its excellent switching performance is particularly important for high-power density computing platforms.
With its high voltage, high current capability and low on-resistance, HAT2171H-EL-E-VB provides a reliable solution for a variety of high-power and high-efficiency applications, meeting the high performance and efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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