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HAT2170H-VB Product details
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1. HAT2170H-VB Product Introduction
HAT2170H-VB is a high-performance single N-channel MOSFET in SOT669 package. This MOSFET has excellent current handling capability and extremely low on-resistance, suitable for applications requiring high power and high efficiency. Its maximum drain-source voltage is 40V, the gate voltage rating range is ±20V, and the threshold voltage (Vth) is 1.4V, which enables it to start at low voltage. The on-resistance (RDS(ON)) of HAT2170H-VB at 4.5V gate-source voltage is 2.4mΩ, and it is further reduced to 2mΩ at 10V gate-source voltage, showing extremely low conduction loss. This MOSFET supports a maximum drain current of up to 100A, and uses Trench technology to provide excellent switching performance and low switching losses, suitable for a variety of high-power and high-current electronic applications.
HAT2170H-VB is a high-performance single N-channel MOSFET in SOT669 package. This MOSFET has excellent current handling capability and extremely low on-resistance, suitable for applications requiring high power and high efficiency. Its maximum drain-source voltage is 40V, the gate voltage rating range is ±20V, and the threshold voltage (Vth) is 1.4V, which enables it to start at low voltage. The on-resistance (RDS(ON)) of HAT2170H-VB at 4.5V gate-source voltage is 2.4mΩ, and it is further reduced to 2mΩ at 10V gate-source voltage, showing extremely low conduction loss. This MOSFET supports a maximum drain current of up to 100A, and uses Trench technology to provide excellent switching performance and low switching losses, suitable for a variety of high-power and high-current electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. HAT2170H-VB Detailed parameter description
- **Package type**: SOT669
- **Channel configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench
- **Package type**: SOT669
- **Channel configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples
The high current capability and low on-resistance of the HAT2170H-VB MOSFET make it perform well in many high-power applications. Here are some typical application areas:
1. **High-power DC-DC converter**: Due to its extremely low on-resistance and high current handling capability, this MOSFET is very suitable for use in high-power DC-DC converters, which can effectively reduce power consumption and improve conversion efficiency.
2. **Power management system**: In the power management system, the HAT2170H-VB can be used as a switching element to provide stable current control and efficient power conversion, optimize system performance and reduce energy loss.
3. **Motor drive module**: This MOSFET can be used in motor drive modules to handle high current requirements and provide stable motor control for high-power motor drive applications.
4. **High Power Switching Application**: In switching applications that require high current and high power, the low on-resistance and high current capability of the HAT2170H-VB make it an ideal choice to ensure the reliability and efficiency of the switching operation.
The design of the HAT2170H-VB makes it an ideal choice in a variety of high power applications, providing excellent current control and efficient power conversion solutions.
The high current capability and low on-resistance of the HAT2170H-VB MOSFET make it perform well in many high-power applications. Here are some typical application areas:
1. **High-power DC-DC converter**: Due to its extremely low on-resistance and high current handling capability, this MOSFET is very suitable for use in high-power DC-DC converters, which can effectively reduce power consumption and improve conversion efficiency.
2. **Power management system**: In the power management system, the HAT2170H-VB can be used as a switching element to provide stable current control and efficient power conversion, optimize system performance and reduce energy loss.
3. **Motor drive module**: This MOSFET can be used in motor drive modules to handle high current requirements and provide stable motor control for high-power motor drive applications.
4. **High Power Switching Application**: In switching applications that require high current and high power, the low on-resistance and high current capability of the HAT2170H-VB make it an ideal choice to ensure the reliability and efficiency of the switching operation.
The design of the HAT2170H-VB makes it an ideal choice in a variety of high power applications, providing excellent current control and efficient power conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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