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HAT2169H-EL-E-VB Product details
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HAT2169H-EL-E-VB Product Introduction
The HAT2169H-EL-E-VB is a high-performance N-channel power MOSFET in a SOT669 package. The device is designed to handle drain-source voltages (VDS) up to 40V and has a gate-source voltage (VGS) tolerance of 20V. Its threshold voltage is 1.4V, ensuring effective switching at lower gate-source voltages. The HAT2169H-EL-E-VB uses Trench technology and has extremely low on-resistance, including 2.4mΩ (at VGS = 4.5V) and 2mΩ (at VGS = 10V), with a drain current of up to 100A. Its excellent current handling capability and low on-resistance make it excel in high current applications and is suitable for scenarios with strict requirements on efficiency and power density.
The HAT2169H-EL-E-VB is a high-performance N-channel power MOSFET in a SOT669 package. The device is designed to handle drain-source voltages (VDS) up to 40V and has a gate-source voltage (VGS) tolerance of 20V. Its threshold voltage is 1.4V, ensuring effective switching at lower gate-source voltages. The HAT2169H-EL-E-VB uses Trench technology and has extremely low on-resistance, including 2.4mΩ (at VGS = 4.5V) and 2mΩ (at VGS = 10V), with a drain current of up to 100A. Its excellent current handling capability and low on-resistance make it excel in high current applications and is suitable for scenarios with strict requirements on efficiency and power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
HAT2169H-EL-E-VB Detailed parameter description
1. **Package form**: SOT669
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.4V
6. **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
7. **Drain current (ID)**: 100A
8. **Technology type**: Trench technology
1. **Package form**: SOT669
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.4V
6. **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
7. **Drain current (ID)**: 100A
8. **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples of HAT2169H-EL-E-VB
Due to its high current handling capability and ultra-low on-resistance, the HAT2169H-EL-E-VB MOSFET is very suitable for use in the following fields and modules:
1. **High-efficiency power converter**: In DC-DC converters, the HAT2169H-EL-E-VB is able to provide low-loss current switching functions. Its low on-resistance reduces power loss and improves the efficiency of the overall system, making it particularly suitable for use in efficient power modules and high-power power supply systems.
2. **Motor drive circuit**: The high current capability of this MOSFET enables it to perform well in motor drive applications. Whether in industrial motor control or in power tools, the HAT2169H-EL-E-VB is able to provide stable switching performance and high current handling capabilities to ensure efficient operation of motor control systems.
3. **High current load switch**: In load switch applications that need to handle high currents, such as battery management systems and high-power load switches, the HAT2169H-EL-E-VB enables efficient current control. Its low on-resistance and high current capability can reduce switching losses and improve system reliability.
4. **Electric vehicles and charging systems**: In the power management and charging systems of electric vehicles, the HAT2169H-EL-E-VB is able to handle high current and high power requirements. Its excellent current handling capability and low on-resistance are critical to improving the efficiency and performance of electric vehicle systems.
These application examples show that the HAT2169H-EL-E-VB MOSFET has significant advantages in high current and high-efficiency applications, and is suitable for modern electronic systems that require high power density and low power consumption.
Due to its high current handling capability and ultra-low on-resistance, the HAT2169H-EL-E-VB MOSFET is very suitable for use in the following fields and modules:
1. **High-efficiency power converter**: In DC-DC converters, the HAT2169H-EL-E-VB is able to provide low-loss current switching functions. Its low on-resistance reduces power loss and improves the efficiency of the overall system, making it particularly suitable for use in efficient power modules and high-power power supply systems.
2. **Motor drive circuit**: The high current capability of this MOSFET enables it to perform well in motor drive applications. Whether in industrial motor control or in power tools, the HAT2169H-EL-E-VB is able to provide stable switching performance and high current handling capabilities to ensure efficient operation of motor control systems.
3. **High current load switch**: In load switch applications that need to handle high currents, such as battery management systems and high-power load switches, the HAT2169H-EL-E-VB enables efficient current control. Its low on-resistance and high current capability can reduce switching losses and improve system reliability.
4. **Electric vehicles and charging systems**: In the power management and charging systems of electric vehicles, the HAT2169H-EL-E-VB is able to handle high current and high power requirements. Its excellent current handling capability and low on-resistance are critical to improving the efficiency and performance of electric vehicle systems.
These application examples show that the HAT2169H-EL-E-VB MOSFET has significant advantages in high current and high-efficiency applications, and is suitable for modern electronic systems that require high power density and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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