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HAT2167H-EL-E-VB Product details
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1. HAT2167H-EL-E-VB Product Introduction
HAT2167H-EL-E-VB is a high-performance single-channel N-type MOSFET in SOT669 package. The product has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) tolerance of ±20V. The turn-on voltage (Vth) is 0.8V, which allows it to be effectively turned on at a lower gate voltage. HAT2167H-EL-E-VB uses advanced Trench technology and has extremely low on-resistance of 3.36mΩ (VGS=4.5V) and 2.8mΩ (VGS=10V), respectively, and a rated drain current of up to 90A. This MOSFET is designed for high-efficiency power management and switching applications, and is particularly suitable for use in high current and low power consumption occasions.
HAT2167H-EL-E-VB is a high-performance single-channel N-type MOSFET in SOT669 package. The product has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) tolerance of ±20V. The turn-on voltage (Vth) is 0.8V, which allows it to be effectively turned on at a lower gate voltage. HAT2167H-EL-E-VB uses advanced Trench technology and has extremely low on-resistance of 3.36mΩ (VGS=4.5V) and 2.8mΩ (VGS=10V), respectively, and a rated drain current of up to 90A. This MOSFET is designed for high-efficiency power management and switching applications, and is particularly suitable for use in high current and low power consumption occasions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. HAT2167H-EL-E-VB Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON)）**:
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Rated drain current (ID)**: 90A
- **Technology**: Trench technology
- **Package form**: SOT669
- **Package type**: SOT669
- **Configuration**: Single-channel N-type MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON)）**:
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Rated drain current (ID)**: 90A
- **Technology**: Trench technology
- **Package form**: SOT669
Domain and module applications：
3. Application fields and modules
HAT2167H-EL-E-VB MOSFET is suitable for a variety of fields and modules due to its excellent performance:
1. **Power management system**: The low on-resistance and high current carrying capacity of HAT2167H-EL-E-VB make it very suitable for power management systems. It can effectively control the power switch, improve the power conversion efficiency, and reduce energy loss. It is suitable for high-power DC-DC converters and regulators.
2. **Motor drive module**: Due to its high rated current, HAT2167H-EL-E-VB can work stably in motor drive applications. It is suitable for controlling the start, stop and speed regulation of high-current DC motors. It is widely used in electric vehicles, industrial motor drives and other fields.
3. **High-power switching**: In applications where high-power switching is required, such as high-power LED lighting, power amplifiers, etc., the low on-resistance and high current capability of HAT2167H-EL-E-VB can provide efficient switching performance, reduce power consumption and heat generation.
4. **Fast switching circuit**: Its extremely low on-resistance and fast response characteristics make it suitable for use in fast switching circuits, such as high-frequency switching power supplies or pulse power supply applications, which helps to improve the working efficiency and reliability of the circuit.
Through these application scenarios, HAT2167H-EL-E-VB MOSFET has demonstrated its excellent performance and reliability in various high-performance power management and switching control systems.
HAT2167H-EL-E-VB MOSFET is suitable for a variety of fields and modules due to its excellent performance:
1. **Power management system**: The low on-resistance and high current carrying capacity of HAT2167H-EL-E-VB make it very suitable for power management systems. It can effectively control the power switch, improve the power conversion efficiency, and reduce energy loss. It is suitable for high-power DC-DC converters and regulators.
2. **Motor drive module**: Due to its high rated current, HAT2167H-EL-E-VB can work stably in motor drive applications. It is suitable for controlling the start, stop and speed regulation of high-current DC motors. It is widely used in electric vehicles, industrial motor drives and other fields.
3. **High-power switching**: In applications where high-power switching is required, such as high-power LED lighting, power amplifiers, etc., the low on-resistance and high current capability of HAT2167H-EL-E-VB can provide efficient switching performance, reduce power consumption and heat generation.
4. **Fast switching circuit**: Its extremely low on-resistance and fast response characteristics make it suitable for use in fast switching circuits, such as high-frequency switching power supplies or pulse power supply applications, which helps to improve the working efficiency and reliability of the circuit.
Through these application scenarios, HAT2167H-EL-E-VB MOSFET has demonstrated its excellent performance and reliability in various high-performance power management and switching control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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