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HAT2165H-EL-E-VB Product details
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HAT2165H-EL-E-VB MOSFET Product Introduction
HAT2165H-EL-E-VB is a high-performance single N-channel MOSFET in a SOT669 package, designed for high current switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and its threshold voltage is as low as 0.8V, allowing effective switching at low gate voltages. It has extremely low on-resistance, 3.36mΩ @ VGS=4.5V and 2.8mΩ @ VGS=10V, and a leakage current (ID) of up to 90A. Using advanced trench technology, this MOSFET is able to excel in high current and high efficiency applications.
HAT2165H-EL-E-VB is a high-performance single N-channel MOSFET in a SOT669 package, designed for high current switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and its threshold voltage is as low as 0.8V, allowing effective switching at low gate voltages. It has extremely low on-resistance, 3.36mΩ @ VGS=4.5V and 2.8mΩ @ VGS=10V, and a leakage current (ID) of up to 90A. Using advanced trench technology, this MOSFET is able to excel in high current and high efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package:** SOT669
- Small surface mount package suitable for space-constrained electronic devices, providing efficient integration and good thermal management.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for a variety of high current switching and control applications.
- **VDS (drain-source voltage):** 30V
- The maximum voltage between the drain and the source, suitable for applications that handle medium voltages.
- **VGS (gate-source voltage):** ±20V
- The range of voltages that can be applied between the gate and the source, providing flexible drive voltages for the MOSFET.
- **Vth (threshold voltage):** 0.8V
- The minimum gate-source voltage required to turn on the MOSFET, supporting fast switching under low voltage conditions.
- **RDS(ON):** 3.36mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET in the on state, indicating low power consumption and high efficiency.
- **ID(Drain Current):** 90A
- The maximum continuous current that the MOSFET can handle, suitable for high current applications.
- **Technology:** Trench Technology
- Using advanced trench technology, it provides low on-resistance and high efficiency, optimizing the operating efficiency and power handling capability of the MOSFET.
- **Package:** SOT669
- Small surface mount package suitable for space-constrained electronic devices, providing efficient integration and good thermal management.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for a variety of high current switching and control applications.
- **VDS (drain-source voltage):** 30V
- The maximum voltage between the drain and the source, suitable for applications that handle medium voltages.
- **VGS (gate-source voltage):** ±20V
- The range of voltages that can be applied between the gate and the source, providing flexible drive voltages for the MOSFET.
- **Vth (threshold voltage):** 0.8V
- The minimum gate-source voltage required to turn on the MOSFET, supporting fast switching under low voltage conditions.
- **RDS(ON):** 3.36mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET in the on state, indicating low power consumption and high efficiency.
- **ID(Drain Current):** 90A
- The maximum continuous current that the MOSFET can handle, suitable for high current applications.
- **Technology:** Trench Technology
- Using advanced trench technology, it provides low on-resistance and high efficiency, optimizing the operating efficiency and power handling capability of the MOSFET.
Domain and module applications：
Application examples
The high performance characteristics of the HAT2165H-EL-E-VB MOSFET make it suitable for multiple fields and modules:
1. **Power management system:** Due to its low on-resistance and high current capability, this MOSFET is very suitable for use in high-efficiency power management systems such as DC-DC converters, switching power supplies, and voltage regulation modules. It can efficiently control the flow of power, reduce power consumption, and improve the overall efficiency of the system.
2. **Motor drive:** In motor control applications, the HAT2165H-EL-E-VB can withstand high currents and provide low on-resistance, which helps to achieve smooth and efficient motor drive. It is suitable for motor control systems in industrial automation, power tools, and consumer electronics.
3. **High power switching:** The high current handling capability and low on-resistance of this MOSFET make it suitable for high power switching applications, including high power load switching and current overload protection circuits. It can provide stable switching performance under high power conditions.
4. **Automotive Electronics:** In automotive electronic devices, HAT2165H-EL-E-VB can be used for power switching and load control, such as on-board power management systems and electric seat controls. Its high current handling capability and low on-resistance help improve the efficiency and reliability of automotive electronic systems.
With its extremely low on-resistance and high current capability, HAT2165H-EL-E-VB MOSFET performs well in power management, motor drive, high power switching and automotive electronics applications.
The high performance characteristics of the HAT2165H-EL-E-VB MOSFET make it suitable for multiple fields and modules:
1. **Power management system:** Due to its low on-resistance and high current capability, this MOSFET is very suitable for use in high-efficiency power management systems such as DC-DC converters, switching power supplies, and voltage regulation modules. It can efficiently control the flow of power, reduce power consumption, and improve the overall efficiency of the system.
2. **Motor drive:** In motor control applications, the HAT2165H-EL-E-VB can withstand high currents and provide low on-resistance, which helps to achieve smooth and efficient motor drive. It is suitable for motor control systems in industrial automation, power tools, and consumer electronics.
3. **High power switching:** The high current handling capability and low on-resistance of this MOSFET make it suitable for high power switching applications, including high power load switching and current overload protection circuits. It can provide stable switching performance under high power conditions.
4. **Automotive Electronics:** In automotive electronic devices, HAT2165H-EL-E-VB can be used for power switching and load control, such as on-board power management systems and electric seat controls. Its high current handling capability and low on-resistance help improve the efficiency and reliability of automotive electronic systems.
With its extremely low on-resistance and high current capability, HAT2165H-EL-E-VB MOSFET performs well in power management, motor drive, high power switching and automotive electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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