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HAT2161H-EL-E-VB Product details
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HAT2161H-EL-E-VB MOSFET Product Introduction
HAT2161H-EL-E-VB is a high-performance single N-channel MOSFET in SOT669 package. It is designed to provide excellent switching performance and ultra-low on-resistance, suitable for high power density and high efficiency applications. The drain-source voltage (VDS) of this MOSFET is 30V, and the gate-source voltage (VGS) supports a range of ±20V, ensuring reliable operation under a variety of voltage conditions. Its gate threshold voltage (Vth) is 0.8V, allowing low voltage control. The HAT2161H-EL-E-VB uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)) of 3.36mΩ at VGS of 4.5V and 2.8mΩ at VGS of 10V, supporting up to 90A of continuous drain current (ID), making it an excellent performer in high current and high power applications.
HAT2161H-EL-E-VB is a high-performance single N-channel MOSFET in SOT669 package. It is designed to provide excellent switching performance and ultra-low on-resistance, suitable for high power density and high efficiency applications. The drain-source voltage (VDS) of this MOSFET is 30V, and the gate-source voltage (VGS) supports a range of ±20V, ensuring reliable operation under a variety of voltage conditions. Its gate threshold voltage (Vth) is 0.8V, allowing low voltage control. The HAT2161H-EL-E-VB uses advanced Trench technology to provide extremely low on-resistance (RDS(ON)) of 3.36mΩ at VGS of 4.5V and 2.8mΩ at VGS of 10V, supporting up to 90A of continuous drain current (ID), making it an excellent performer in high current and high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
HAT2161H-EL-E-VB Detailed parameter description
- **Package type (Package): ** SOT669
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 0.8V
- **On-resistance (RDS(ON)): **
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Continuous drain current (ID): ** 90A
- **Technology type (Technology): ** Trench technology
- **Package type (Package): ** SOT669
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 0.8V
- **On-resistance (RDS(ON)): **
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Continuous drain current (ID): ** 90A
- **Technology type (Technology): ** Trench technology
Domain and module applications：
HAT2161H-EL-E-VB Application Fields and Module Examples
1. **Power Management System:** HAT2161H-EL-E-VB performs well in power management modules, especially in high-efficiency DC-DC converters and power path management. Its low on-resistance and high current handling capability help reduce energy loss and improve system efficiency, and is suitable for power conversion applications requiring high power density.
2. **Motor Drive:** In motor drive systems, such as stepper motors and DC motor drives, the high current carrying capacity and low on-resistance of HAT2161H-EL-E-VB enable it to provide stable and precise current support. It is suitable for motor control applications that require high power and high efficiency, improving the control accuracy of the motor and the overall efficiency of the system.
3. **Load Switch:** Due to its extremely low on-resistance and high current capability, HAT2161H-EL-E-VB is very suitable for load switch applications. In situations where high current and low power consumption are required, it can effectively reduce power consumption during switching and improve the overall performance of the system.
4. **Consumer Electronics:** In consumer electronic devices such as smartphones and tablets, the compact package and high efficiency of the HAT2161H-EL-E-VB make it an ideal choice for battery management systems and power path control. It can help improve the battery life and overall performance of the device, especially in high-power and high-load applications.
1. **Power Management System:** HAT2161H-EL-E-VB performs well in power management modules, especially in high-efficiency DC-DC converters and power path management. Its low on-resistance and high current handling capability help reduce energy loss and improve system efficiency, and is suitable for power conversion applications requiring high power density.
2. **Motor Drive:** In motor drive systems, such as stepper motors and DC motor drives, the high current carrying capacity and low on-resistance of HAT2161H-EL-E-VB enable it to provide stable and precise current support. It is suitable for motor control applications that require high power and high efficiency, improving the control accuracy of the motor and the overall efficiency of the system.
3. **Load Switch:** Due to its extremely low on-resistance and high current capability, HAT2161H-EL-E-VB is very suitable for load switch applications. In situations where high current and low power consumption are required, it can effectively reduce power consumption during switching and improve the overall performance of the system.
4. **Consumer Electronics:** In consumer electronic devices such as smartphones and tablets, the compact package and high efficiency of the HAT2161H-EL-E-VB make it an ideal choice for battery management systems and power path control. It can help improve the battery life and overall performance of the device, especially in high-power and high-load applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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