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HAT2160H-EL-E-VB Product details
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1. HAT2160H-EL-E-VB Product Introduction
HAT2160H-EL-E-VB is an N-channel MOSFET based on Trench technology, packaged in SOT669. This MOSFET is designed for high-efficiency applications, with a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V, and can operate stably under a variety of voltage conditions. Its turn-on voltage (Vth) is 0.8V, which allows it to be turned on reliably even at a lower gate-source voltage. The on-resistance (RDS(ON)) of HAT2160H-EL-E-VB is 3.36mΩ at VGS=4.5V and 2.8mΩ at VGS=10V, showing excellent current conduction performance. Its maximum continuous drain current (ID) is as high as 90A, which is suitable for handling high current loads. The high efficiency and low power consumption of this MOSFET make it very suitable for electronic applications requiring high power density and high reliability.
HAT2160H-EL-E-VB is an N-channel MOSFET based on Trench technology, packaged in SOT669. This MOSFET is designed for high-efficiency applications, with a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V, and can operate stably under a variety of voltage conditions. Its turn-on voltage (Vth) is 0.8V, which allows it to be turned on reliably even at a lower gate-source voltage. The on-resistance (RDS(ON)) of HAT2160H-EL-E-VB is 3.36mΩ at VGS=4.5V and 2.8mΩ at VGS=10V, showing excellent current conduction performance. Its maximum continuous drain current (ID) is as high as 90A, which is suitable for handling high current loads. The high efficiency and low power consumption of this MOSFET make it very suitable for electronic applications requiring high power density and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. Detailed parameter description of HAT2160H-EL-E-VB
1. **Package type**: SOT669
- The package is SOT669, which has the characteristics of miniaturization and low package height, suitable for space-constrained applications, while providing good heat dissipation and electrical performance.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and amplification applications, providing efficient current handling capabilities and switching performance.
3. **Drain-source voltage (VDS)**: 30V
- The maximum drain-source voltage is 30V, suitable for low to medium voltage application scenarios.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate-source voltage of ±20V, providing a wide range of drive options and flexibility for design.
5. **Throw Voltage (Vth)**: 0.8V
- The lower turn-on voltage enables the MOSFET to start up at a lower gate-source voltage, suitable for low voltage applications.
6. **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- The extremely low on-resistance reduces power loss and improves the overall efficiency of the circuit.
7. **Maximum Continuous Drain Current (ID)**: 90A
- Supports a drain current of up to 90A, capable of handling large current loads, suitable for high power applications.
8. **Technology**: Trench
- Trench technology optimizes the MOSFET's conduction performance and power management, making it excel in high current and low voltage applications.
1. **Package type**: SOT669
- The package is SOT669, which has the characteristics of miniaturization and low package height, suitable for space-constrained applications, while providing good heat dissipation and electrical performance.
2. **Configuration**: Single N-channel
- The single N-channel configuration is suitable for a variety of switching and amplification applications, providing efficient current handling capabilities and switching performance.
3. **Drain-source voltage (VDS)**: 30V
- The maximum drain-source voltage is 30V, suitable for low to medium voltage application scenarios.
4. **Gate-source voltage (VGS)**: ±20V
- Supports gate-source voltage of ±20V, providing a wide range of drive options and flexibility for design.
5. **Throw Voltage (Vth)**: 0.8V
- The lower turn-on voltage enables the MOSFET to start up at a lower gate-source voltage, suitable for low voltage applications.
6. **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- The extremely low on-resistance reduces power loss and improves the overall efficiency of the circuit.
7. **Maximum Continuous Drain Current (ID)**: 90A
- Supports a drain current of up to 90A, capable of handling large current loads, suitable for high power applications.
8. **Technology**: Trench
- Trench technology optimizes the MOSFET's conduction performance and power management, making it excel in high current and low voltage applications.
Domain and module applications：
3. Application fields and module examples
1. **High-power power management**:
- HAT2160H-EL-E-VB is very suitable for switching elements in high-power power management systems, such as high-efficiency DC-DC converters and power distribution networks. Its low on-resistance and high current handling capability help improve the energy efficiency and stability of the system.
2. **Electric vehicles and battery management systems**:
- In electric vehicles and battery management systems, this MOSFET can be used for battery switching and power management, providing efficient current control and low power consumption performance, ensuring system reliability and long life.
3. **Motor drive and power amplifier**:
- Due to its high current handling capability and low on-resistance, HAT2160H-EL-E-VB can be used in motor drives and power amplifiers to provide a stable current supply to the motor or load and improve the overall performance of the system.
4. **Load Switch and Switching Power Supply**:
- This MOSFET is also suitable for use in load switching and switching power supplies. Its high efficiency and low power consumption characteristics can provide reliable switching performance under various load conditions.
The superior performance and wide applicability of HAT2160H-EL-E-VB make it excel in high-power and high-efficiency applications, and it is an ideal choice for optimizing system performance and reducing power consumption.
1. **High-power power management**:
- HAT2160H-EL-E-VB is very suitable for switching elements in high-power power management systems, such as high-efficiency DC-DC converters and power distribution networks. Its low on-resistance and high current handling capability help improve the energy efficiency and stability of the system.
2. **Electric vehicles and battery management systems**:
- In electric vehicles and battery management systems, this MOSFET can be used for battery switching and power management, providing efficient current control and low power consumption performance, ensuring system reliability and long life.
3. **Motor drive and power amplifier**:
- Due to its high current handling capability and low on-resistance, HAT2160H-EL-E-VB can be used in motor drives and power amplifiers to provide a stable current supply to the motor or load and improve the overall performance of the system.
4. **Load Switch and Switching Power Supply**:
- This MOSFET is also suitable for use in load switching and switching power supplies. Its high efficiency and low power consumption characteristics can provide reliable switching performance under various load conditions.
The superior performance and wide applicability of HAT2160H-EL-E-VB make it excel in high-power and high-efficiency applications, and it is an ideal choice for optimizing system performance and reducing power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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