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HAT2134H-EL-E-VB Product details
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HAT2134H-EL-E-VB MOSFET Product Introduction
HAT2134H-EL-E-VB is a high-performance single N-channel MOSFET in SOT669 package, designed for high current and low on-resistance applications. It uses advanced Trench technology to provide excellent conduction characteristics at low gate drive voltage. The extremely low on-resistance and high current handling capability of this MOSFET make it outstanding in high-performance electronic devices, especially for applications requiring high switching speed and low power consumption.
HAT2134H-EL-E-VB is a high-performance single N-channel MOSFET in SOT669 package, designed for high current and low on-resistance applications. It uses advanced Trench technology to provide excellent conduction characteristics at low gate drive voltage. The extremely low on-resistance and high current handling capability of this MOSFET make it outstanding in high-performance electronic devices, especially for applications requiring high switching speed and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
HAT2134H-EL-E-VB MOSFET Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 90A
- **Technology type**: Trench
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 90A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
1. **High-efficiency power management**: The extremely low on-resistance and high current capability of the HAT2134H-EL-E-VB make it ideal for use in high-efficiency power management systems such as DC-DC converters and power distribution modules. Its excellent switching performance helps improve conversion efficiency, reduce power consumption, and ensure the stability and reliability of the power system.
2. **Battery Management System (BMS)**: In the battery management system, the HAT2134H-EL-E-VB is able to effectively control the charging and discharging process of the battery. Due to its low on-resistance, it helps reduce power consumption in the battery management system and improves the overall efficiency of the system, especially in the application of electric vehicles and high-performance battery packs.
3. **Load switching and motor drive**: The HAT2134H-EL-E-VB is also suitable for load switching and motor drive applications. Its high current handling capability and low on-resistance enable it to provide efficient performance in motor drive circuits that require high switching speeds and high power handling. For example, it can be used in power tools, fan drives and other high-power devices to ensure high efficiency and reliability.
These features make the HAT2134H-EL-E-VB widely used in modern electronic devices that require high switching efficiency and low power consumption.
Are you looking for a suitable MOSFET for a specific project or application? If so, can you provide more background information about the project? This way I can provide you with more accurate advice.
1. **High-efficiency power management**: The extremely low on-resistance and high current capability of the HAT2134H-EL-E-VB make it ideal for use in high-efficiency power management systems such as DC-DC converters and power distribution modules. Its excellent switching performance helps improve conversion efficiency, reduce power consumption, and ensure the stability and reliability of the power system.
2. **Battery Management System (BMS)**: In the battery management system, the HAT2134H-EL-E-VB is able to effectively control the charging and discharging process of the battery. Due to its low on-resistance, it helps reduce power consumption in the battery management system and improves the overall efficiency of the system, especially in the application of electric vehicles and high-performance battery packs.
3. **Load switching and motor drive**: The HAT2134H-EL-E-VB is also suitable for load switching and motor drive applications. Its high current handling capability and low on-resistance enable it to provide efficient performance in motor drive circuits that require high switching speeds and high power handling. For example, it can be used in power tools, fan drives and other high-power devices to ensure high efficiency and reliability.
These features make the HAT2134H-EL-E-VB widely used in modern electronic devices that require high switching efficiency and low power consumption.
Are you looking for a suitable MOSFET for a specific project or application? If so, can you provide more background information about the project? This way I can provide you with more accurate advice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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