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HAT2129H-EL-E-VB Product details
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1. HAT2129H-EL-E-VB Product Introduction
HAT2129H-EL-E-VB is a high-performance single-channel N-channel MOSFET in SOT669 package. This MOSFET has a high drain-source voltage (VDS) of 40V and a wide gate-source voltage range (VGS) of ±20V. Its turn-on voltage (Vth) is 1.4V, and it provides extremely low on-resistance (RDS(ON)) through Trench technology, specifically 2.4mΩ @ VGS=4.5V and 2mΩ @ VGS=10V. This MOSFET can withstand drain currents of up to 100A and is suitable for applications that require high current handling capabilities and efficient switching performance. Its compact SOT669 package makes it ideal for space-constrained applications.
HAT2129H-EL-E-VB is a high-performance single-channel N-channel MOSFET in SOT669 package. This MOSFET has a high drain-source voltage (VDS) of 40V and a wide gate-source voltage range (VGS) of ±20V. Its turn-on voltage (Vth) is 1.4V, and it provides extremely low on-resistance (RDS(ON)) through Trench technology, specifically 2.4mΩ @ VGS=4.5V and 2mΩ @ VGS=10V. This MOSFET can withstand drain currents of up to 100A and is suitable for applications that require high current handling capabilities and efficient switching performance. Its compact SOT669 package makes it ideal for space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
2. HAT2129H-EL-E-VB Detailed parameter description
- **Package type (Package)**: SOT669
- **Channel configuration (Configuration)**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type (Technology)**: Trench technology
- **Package type (Package)**: SOT669
- **Channel configuration (Configuration)**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throwing voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type (Technology)**: Trench technology
Domain and module applications：
3. HAT2129H-EL-E-VB application areas and module examples
1. **High-efficiency power management**: The low on-resistance and high current carrying capacity of HAT2129H-EL-E-VB make it very suitable for efficient DC-DC converters and load switches. These applications require MOSFETs to operate stably under high current conditions while maintaining low power consumption and heat generation, thereby improving the overall efficiency of the power system.
2. **Electric vehicles and motor drives**: In electric vehicles and motor drive systems, the high current capability and low on-resistance of HAT2129H-EL-E-VB enable it to effectively control the switching of motors and batteries. Its high efficiency helps reduce power loss and improve system response speed, especially for occasions requiring high power density and fast switching.
3. **Consumer electronics**: In such as smart phones, laptops and other high-performance consumer electronics, HAT2129H-EL-E-VB can be used for battery management, power switches and high-efficiency power conversion modules. Its small SOT669 package helps save board space, while its excellent electrical performance ensures stable operation and long product life.
The HAT2129H-EL-E-VB's high current handling capability and excellent conduction performance make it an excellent performer in applications requiring efficient switching and high power density.
1. **High-efficiency power management**: The low on-resistance and high current carrying capacity of HAT2129H-EL-E-VB make it very suitable for efficient DC-DC converters and load switches. These applications require MOSFETs to operate stably under high current conditions while maintaining low power consumption and heat generation, thereby improving the overall efficiency of the power system.
2. **Electric vehicles and motor drives**: In electric vehicles and motor drive systems, the high current capability and low on-resistance of HAT2129H-EL-E-VB enable it to effectively control the switching of motors and batteries. Its high efficiency helps reduce power loss and improve system response speed, especially for occasions requiring high power density and fast switching.
3. **Consumer electronics**: In such as smart phones, laptops and other high-performance consumer electronics, HAT2129H-EL-E-VB can be used for battery management, power switches and high-efficiency power conversion modules. Its small SOT669 package helps save board space, while its excellent electrical performance ensures stable operation and long product life.
The HAT2129H-EL-E-VB's high current handling capability and excellent conduction performance make it an excellent performer in applications requiring efficient switching and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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