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HAT2116H-VB Product details
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Product Introduction
HAT2116H-VB is a high-performance N-channel MOSFET in SOT669 package based on advanced Trench technology. It has extremely low on-resistance and high current handling capability, suitable for high-efficiency power switching and power management applications. This MOSFET is designed to meet the requirements of modern electronic equipment for high performance, low power consumption and high reliability.
HAT2116H-VB is a high-performance N-channel MOSFET in SOT669 package based on advanced Trench technology. It has extremely low on-resistance and high current handling capability, suitable for high-efficiency power switching and power management applications. This MOSFET is designed to meet the requirements of modern electronic equipment for high performance, low power consumption and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: HAT2116H-VB
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Continuous drain current (ID)**: 90A
- **Technology**: Trench
- **Model**: HAT2116H-VB
- **Package**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Continuous drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High-efficiency power switch**: The ultra-low on-resistance and high current capability of HAT2116H-VB make it ideal for use in high-efficiency power switch modules. In high-power density power converters and switching power supplies, this MOSFET can significantly improve system efficiency and reduce heat generation.
2. **Electric vehicle control system**: In the motor control and battery management system of electric vehicles, HAT2116H-VB provides high current handling capability and low on-resistance, which helps improve the overall performance of electric vehicles and the life of the battery.
3. **Industrial power management**: Due to its high current capability and compact package, HAT2116H-VB is suitable for a variety of industrial power management applications, including high-power load switching and motor drives. It can provide reliable switching performance in demanding industrial environments.
4. **Consumer electronics**: In consumer electronics such as smartphones, tablets and laptops, this MOSFET enables efficient power management and thermal control. Its small package and low on-resistance make it ideal for space-constrained designs.
With its excellent electrical performance and compact package, the HAT2116H-VB is suitable for a wide range of high-power and high-efficiency applications, providing a reliable solution for modern electronic devices.
1. **High-efficiency power switch**: The ultra-low on-resistance and high current capability of HAT2116H-VB make it ideal for use in high-efficiency power switch modules. In high-power density power converters and switching power supplies, this MOSFET can significantly improve system efficiency and reduce heat generation.
2. **Electric vehicle control system**: In the motor control and battery management system of electric vehicles, HAT2116H-VB provides high current handling capability and low on-resistance, which helps improve the overall performance of electric vehicles and the life of the battery.
3. **Industrial power management**: Due to its high current capability and compact package, HAT2116H-VB is suitable for a variety of industrial power management applications, including high-power load switching and motor drives. It can provide reliable switching performance in demanding industrial environments.
4. **Consumer electronics**: In consumer electronics such as smartphones, tablets and laptops, this MOSFET enables efficient power management and thermal control. Its small package and low on-resistance make it ideal for space-constrained designs.
With its excellent electrical performance and compact package, the HAT2116H-VB is suitable for a wide range of high-power and high-efficiency applications, providing a reliable solution for modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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