Product introduction：
1. HAT2108R-VB Product Introduction
HAT2108R-VB is a high-performance dual N-channel MOSFET in SOP8 package. This MOSFET has high switching efficiency and low on-resistance, and is suitable for a variety of power management and switching applications. Its maximum drain-source voltage is 30V, the gate voltage rating range is ±20V, and the threshold voltage (Vth) is 1.7V, enabling it to operate efficiently under low voltage conditions. The on-resistance (RDS(ON)) of HAT2108R-VB at 4.5V gate-source voltage is 26mΩ, and it drops to 22mΩ at 10V gate-source voltage, providing excellent conductivity. The maximum drain current of this MOSFET is 6.8A (N1 channel) and 6.0A (N2 channel). Using Trench technology, HAT2108R-VB has low switching loss and high switching speed in performance, which is very suitable for occasions requiring efficient power conversion and high current handling.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
2. HAT2108R-VB Detailed parameter description
- **Package type**: SOP8
- **Channel configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 22mΩ @ VGS=10V
- **Maximum drain current (ID)**:
- 6.8A (N1 channel)
- 6.0A (N2 channel)
- **Technology type**: Trench
Domain and module applications：
3. Application fields and module examples
HAT2108R-VB MOSFET performs well in various power management and switching applications. Here are some typical application fields:
1. **Power management module**: Due to its low on-resistance and high current capability, HAT2108R-VB is suitable for switch control in power management modules, which can effectively adjust power distribution and improve the energy efficiency of the system.
2. **DC-DC converter**: In DC-DC converters, this MOSFET can be used as a switching element to improve conversion efficiency and system stability through efficient power conversion and low switching losses.
3. **Load switch**: HAT2108R-VB can be used in load switch applications to control the switching state of different loads and ensure system reliability through its low on-resistance and high current handling capability.
4. **Motor drive circuit**: In motor drive circuits, this MOSFET can be used to efficiently control the working state of the motor, adapt to high current requirements, and provide stable current control.
The high performance features of HAT2108R-VB make it suitable for various electronic applications that require efficient current control and low conduction loss, providing a stable and reliable power management solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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