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HAT2099H-EL-E-VB Product details
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HAT2099H-EL-E-VB MOSFET Product Introduction
HAT2099H-EL-E-VB is a high-performance single N-channel MOSFET in SOT669 package. This MOSFET is designed to provide extremely low on-resistance and high current handling capability, suitable for a variety of applications requiring high power density and high efficiency. Its drain-source voltage (VDS) reaches 30V, and the gate-source voltage (VGS) allows an operating range of ±20V. Its gate threshold voltage (Vth) is 0.8V, which allows it to be turned on at a lower control voltage. Through advanced Trench technology, HAT2099H-EL-E-VB achieves a very low on-resistance (RDS(ON)), which is 3.36mΩ at VGS of 4.5V and 2.8mΩ at VGS of 10V, supporting a continuous drain current (ID) of up to 90A. This high current capability and low on-resistance make it an excellent performer in high load and high efficiency applications.
HAT2099H-EL-E-VB is a high-performance single N-channel MOSFET in SOT669 package. This MOSFET is designed to provide extremely low on-resistance and high current handling capability, suitable for a variety of applications requiring high power density and high efficiency. Its drain-source voltage (VDS) reaches 30V, and the gate-source voltage (VGS) allows an operating range of ±20V. Its gate threshold voltage (Vth) is 0.8V, which allows it to be turned on at a lower control voltage. Through advanced Trench technology, HAT2099H-EL-E-VB achieves a very low on-resistance (RDS(ON)), which is 3.36mΩ at VGS of 4.5V and 2.8mΩ at VGS of 10V, supporting a continuous drain current (ID) of up to 90A. This high current capability and low on-resistance make it an excellent performer in high load and high efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
HAT2099H-EL-E-VB Detailed parameter description
- **Package type (Package): ** SOT669
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 0.8V
- **On-resistance (RDS(ON)): **
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Continuous drain current (ID): ** 90A
- **Technology type (Technology): ** Trench technology
- **Package type (Package): ** SOT669
- **Configuration (Configuration): ** Single N-Channel (Single-N-Channel)
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Gate threshold voltage (Vth): ** 0.8V
- **On-resistance (RDS(ON)): **
- 3.36mΩ @ VGS = 4.5V
- 2.8mΩ @ VGS = 10V
- **Continuous drain current (ID): ** 90A
- **Technology type (Technology): ** Trench technology
Domain and module applications：
HAT2099H-EL-E-VB Application Fields and Module Examples
1. **High-efficiency power management:** HAT2099H-EL-E-VB performs well in high-efficiency power management systems. Especially in high-power DC-DC converters and power path management, its low on-resistance and high current handling capability can significantly reduce energy loss and improve the overall efficiency of the system.
2. **Motor drive:** In motor drive applications, such as stepper motors and DC motors, the high current capability and low on-resistance of HAT2099H-EL-E-VB can provide stable current support, thereby improving the control accuracy and efficiency of the motor, and is suitable for motor drive systems that require high power and high efficiency.
3. **Load switch:** HAT2099H-EL-E-VB is suitable for load switch applications, especially in load switch applications that require high current and low power consumption. Its extremely low on-resistance can reduce power consumption during switching and improve the overall efficiency of the system.
4. **Consumer Electronics:** In consumer electronics, such as smartphones, tablets, etc., the small package and high performance of the HAT2099H-EL-E-VB make it an ideal choice for battery management systems and power path control. It can help extend the battery life of the device and improve the overall performance, especially in high power demand situations.
1. **High-efficiency power management:** HAT2099H-EL-E-VB performs well in high-efficiency power management systems. Especially in high-power DC-DC converters and power path management, its low on-resistance and high current handling capability can significantly reduce energy loss and improve the overall efficiency of the system.
2. **Motor drive:** In motor drive applications, such as stepper motors and DC motors, the high current capability and low on-resistance of HAT2099H-EL-E-VB can provide stable current support, thereby improving the control accuracy and efficiency of the motor, and is suitable for motor drive systems that require high power and high efficiency.
3. **Load switch:** HAT2099H-EL-E-VB is suitable for load switch applications, especially in load switch applications that require high current and low power consumption. Its extremely low on-resistance can reduce power consumption during switching and improve the overall efficiency of the system.
4. **Consumer Electronics:** In consumer electronics, such as smartphones, tablets, etc., the small package and high performance of the HAT2099H-EL-E-VB make it an ideal choice for battery management systems and power path control. It can help extend the battery life of the device and improve the overall performance, especially in high power demand situations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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