Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package:** SOP8
- Small surface mount package suitable for a variety of compact electronic devices, providing efficient and reliable integration.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for a variety of switching and amplification applications.
- **VDS (drain-source voltage):** 30V
- The maximum voltage between the drain and the source, suitable for handling medium voltage applications.
- **VGS (gate-source voltage):** ±20V
- The range of voltage that can be applied between the gate and the source, providing flexible driving conditions.
- **Vth (threshold voltage):** 1.7V
- The minimum gate-source voltage required to turn on the MOSFET, allowing operation under low voltage conditions.
- **RDS(ON):** 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- The resistance between the drain and source when the MOSFET is on, indicating low power consumption and high efficiency when the device is on.
- **ID(Drain Current):** 13A
- The maximum continuous current that the MOSFET can withstand, suitable for medium current applications.
- **Technology:** Trench Technology
- Using advanced trench technology, it provides low on-resistance and high efficiency performance, optimizing the working efficiency of the MOSFET.
Domain and module applications：
Application Examples
The characteristics of the HAT2071RJ-VB MOSFET make it suitable for multiple fields and modules:
1. **Power Management System:** The low on-resistance and high current handling capability of this MOSFET are well suited for use in power management systems such as DC-DC converters and voltage regulators. It can efficiently control the flow of power, reduce energy losses, and improve overall system efficiency.
2. **Motor Drive:** In motor control circuits, the HAT2071RJ-VB is able to handle high currents and provide low on-resistance, which helps achieve smooth and efficient motor drive. This is very important for motor drive applications in industrial automation, power tools, and consumer electronics.
3. **Switching Power Supply:** Due to its low on-resistance and high current capability, this MOSFET is suitable for switching power supply applications, where loads can be efficiently switched in power circuits, reducing power consumption and improving system performance.
4. **Consumer Electronic Devices:** In smartphones, tablets and other consumer electronics, HAT2071RJ-VB can be used for power switching and load switching, providing stable performance and low power consumption, improving the overall efficiency and reliability of the equipment.
HAT2071RJ-VB MOSFET has excellent performance in power management, motor drive, switching power supply and consumer electronics due to its efficient switching characteristics and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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