Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package:** SOP8
- Small surface mount package suitable for compact electronic devices, easy to integrate and provide reliable performance.
- **Configuration:** Single N-channel
- Single N-channel MOSFET configuration, suitable for a variety of switching and amplification applications.
- **VDS (drain-source voltage):** 30V
- The maximum voltage between the drain and the source, suitable for handling medium and low voltage applications.
- **VGS (gate-source voltage):** ±20V
- The range of voltage that can be applied between the gate and the source, providing a flexible drive voltage for the MOSFET.
- **Vth (threshold voltage):** 1.7V
- The gate-source voltage required to turn on the MOSFET, allowing the MOSFET to start under low voltage conditions.
- **RDS(ON):** 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- The resistance between the drain and source of the MOSFET when it is on, indicating low power consumption and high efficiency.
- **ID(Drain Current):** 13A
- The maximum continuous current that the MOSFET can handle, suitable for medium current applications.
- **Technology:** Trench Technology
- Advanced trench technology provides low on-resistance and high efficiency, optimizing the operating efficiency of the MOSFET.
Domain and module applications：
Application Examples
The high efficiency performance of the HAT2044R-VB MOSFET makes it suitable for multiple fields and modules:
1. **Power Management System:** Due to its low on-resistance and high current handling capability, this MOSFET is ideal for power management systems, including DC-DC converters and voltage regulators. It can effectively control the flow of power, reduce energy losses, and improve system efficiency.
2. **Motor Drive:** In motor control circuits, the HAT2044R-VB can withstand high currents and provide low on-resistance, which helps to achieve smooth and efficient motor drive. This is essential for motor drive applications in industrial automation and consumer electronics.
3. **Switching Power Supply:** Its low on-resistance and high current capability make it suitable for switching power supply applications, which can efficiently switch loads in power circuits, reduce power consumption and improve overall performance.
4. **Consumer electronics:** In consumer electronics products such as smartphones and tablets, HAT2044R-VB can be used for power switching and load switching, providing stable performance and low power consumption, improving the overall efficiency and service life of the equipment.
The efficient switching characteristics and low on-resistance of HAT2044R-VB MOSFET make it perform well in multiple application fields such as power management, motor drive, switching power supply and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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