Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
100V |
|
1.5V |
3A |
|
|
200mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
100V |
|
1.5V |
3A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
100V |
|
1.5V |
3A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package:** SOP8
- A compact package suitable for surface mounting, providing reliable performance and easy integration.
- **Configuration:** Dual N-Channel + N-Channel
- Two N-Channel MOSFETs are integrated in one package, allowing compact design and efficient circuit layout.
- **VDS (Drain-Source Voltage):** 100V
- The maximum voltage between the drain and the source, ensuring that the device can handle high voltages.
- **VGS (Gate-Source Voltage):** ±20V
- The range of voltages that can be applied between the gate and the source, providing flexibility for driving the MOSFET.
- **Vth (Threshold Voltage):** 1.5V
- The gate-source voltage required to turn on the MOSFET, ensuring that the device can be driven by a low-voltage control signal.
- **RDS(ON):** 200mΩ @ VGS=10V
- The resistance between the drain and source when the MOSFET is on, indicating high efficiency and low power consumption when conducting.
- **ID(Drain Current):** 3A
- The maximum continuous current that the MOSFET can withstand, suitable for medium current applications.
- **Technology:** Trench Technology
- Advanced trench technology provides low on-resistance and high efficiency, optimizing the performance of the MOSFET.
Domain and module applications：
Application Examples
The HAT2035R-VB MOSFET has a variety of application scenarios:
1. **Power Modules:** Due to its high VDS and low on-resistance, this MOSFET is suitable for power circuits, including DC-DC converters and voltage regulator modules. It helps achieve efficient power management by reducing energy losses during switching.
2. **Motor Control Circuits:** The dual N-channel configuration makes it suitable for motor control applications such as robotics, industrial automation, and consumer electronics. The MOSFET is able to handle the required current while ensuring fast switching and low heat generation.
3. **Load Switches:** The low threshold voltage and dual-channel configuration make it suitable for load switch applications that can control multiple power lines in compact electronic devices such as laptops and smartphones.
4. **Automotive Electronics:** Capable of handling high voltages and medium currents, the device is suitable for automotive applications, including electronic control units (ECUs) and battery management systems (BMSs), where reliability and efficiency are critical.
The HAT2035R-VB is an excellent choice for designs that require efficient switching, low power consumption and compact integration, and is widely used in consumer electronics, industrial automation and automotive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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