Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
|
19mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
HAT2027R-VB MOSFET Detailed parameter description
- **Package**: SOP8
- **Configuration**: Dual N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
- **Drain current (ID)**: 7.1A
- **Technology**: Trench
Domain and module applications:
HAT2027R-VB MOSFET Applications and Module Examples
1. **Power Management Module**: The low on-resistance and high current handling capability of the HAT2027R-VB make it ideal for use in power management modules. In such modules, the high efficiency of the MOSFET can effectively reduce power consumption and heat generation, improve the overall efficiency of power management, and is particularly suitable for high-density power supply designs.
2. **DC-DC Converter**: In DC-DC converters, the HAT2027R-VB provides excellent switching performance and low on-resistance, which helps to improve the efficiency of the converter. It is suitable for applications with high switching frequencies and medium current loads, ensuring stable power conversion.
3. **Switching Circuit**: Due to its dual N-Channel configuration, the HAT2027R-VB is suitable for applications that require dual-channel switching. For example, it can be used as a load switch in a dual-channel switching circuit, providing efficient switching control and ensuring stable operation of the circuit.
4. **Drive circuit**: The high current carrying capacity and low on-resistance of HAT2027R-VB also make it suitable for drive circuits. For example, in motor drive applications, it can provide reliable switching control to help achieve smooth and efficient operation of the motor.
Through these application examples, HAT2027R-VB MOSFET demonstrates its multiple application advantages in power management, switch control and drive circuits, meeting the needs of modern electronic design for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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