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HAT2027R-VB Product details

Product introduction:

HAT2027R-VB MOSFET Product Introduction

HAT2027R-VB is a high-performance dual N-Channel MOSFET in SOP8 package. It is designed with Trench technology to meet the requirements of modern electronic devices for high switching performance and low power consumption. The device contains two N-Channel MOSFETs with low on-resistance and high current handling capability, suitable for a variety of power management and switching applications. HAT2027R-VB provides excellent switching characteristics and thermal stability, suitable for use in high-density and high-performance electronic designs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A 19mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
HAT2027R-VB MOSFET Detailed parameter description

- **Package**: SOP8
- **Configuration**: Dual N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
- **Drain current (ID)**: 7.1A
- **Technology**: Trench

Domain and module applications:

HAT2027R-VB MOSFET Applications and Module Examples

1. **Power Management Module**: The low on-resistance and high current handling capability of the HAT2027R-VB make it ideal for use in power management modules. In such modules, the high efficiency of the MOSFET can effectively reduce power consumption and heat generation, improve the overall efficiency of power management, and is particularly suitable for high-density power supply designs.

2. **DC-DC Converter**: In DC-DC converters, the HAT2027R-VB provides excellent switching performance and low on-resistance, which helps to improve the efficiency of the converter. It is suitable for applications with high switching frequencies and medium current loads, ensuring stable power conversion.

3. **Switching Circuit**: Due to its dual N-Channel configuration, the HAT2027R-VB is suitable for applications that require dual-channel switching. For example, it can be used as a load switch in a dual-channel switching circuit, providing efficient switching control and ensuring stable operation of the circuit.

4. **Drive circuit**: The high current carrying capacity and low on-resistance of HAT2027R-VB also make it suitable for drive circuits. For example, in motor drive applications, it can provide reliable switching control to help achieve smooth and efficient operation of the motor.

Through these application examples, HAT2027R-VB MOSFET demonstrates its multiple application advantages in power management, switch control and drive circuits, meeting the needs of modern electronic design for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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