Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-2.5V |
-13.5A |
|
|
11mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-2.5V |
-13.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-2.5V |
-13.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
HAT1128RJ-VB MOSFET Detailed parameter description
- **Package**: SOP8
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Drain current (ID)**: -13.5A
- **Technology**: Trench
Domain and module applications：
HAT1128RJ-VB MOSFET Applications and Module Examples
1. **Power Management Module**: The low on-resistance and high current handling capability of the HAT1128RJ-VB make it ideal for use in power management modules, especially in applications that require high efficiency and low power consumption. It can effectively reduce power consumption and heat generation, improving the overall efficiency and stability of the system.
2. **DC-DC Converter**: In DC-DC converters, the HAT1128RJ-VB provides excellent switching performance and low on-resistance, which helps to improve the efficiency of the converter. It is particularly suitable for application environments that require high switching frequencies and high current handling.
3. **Load Switch**: Due to its high current carrying capability and low on-resistance, the HAT1128RJ-VB is very suitable for use in load switches. It can effectively control the load switch, ensuring the reliability and efficiency of the load switch operation, especially in portable and small devices.
4. **Battery protection circuit**: HAT1128RJ-VB can also be used in battery protection circuits. Its high current capability and low on-resistance help ensure the safety and long life of the battery. In situations such as battery overcharge and over-discharge protection, this MOSFET can effectively protect the battery from damage.
Through these application examples, HAT1128RJ-VB MOSFET demonstrates its multiple application advantages in power management, switch control and protection circuits, meeting the requirements of modern electronic design for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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