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HAT1044M-EL-E-VB Product details
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HAT1044M-EL-E-VB MOSFET Product Introduction
The HAT1044M-EL-E-VB is a single P-channel MOSFET in a SOT23-6 package, designed for small, efficient power switching applications. It has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Manufactured using Trench technology, the HAT1044M-EL-E-VB provides low on-resistance and excellent current handling capabilities, suitable for applications requiring high switching speeds and miniaturized designs.
The HAT1044M-EL-E-VB is a single P-channel MOSFET in a SOT23-6 package, designed for small, efficient power switching applications. It has a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V. Manufactured using Trench technology, the HAT1044M-EL-E-VB provides low on-resistance and excellent current handling capabilities, suitable for applications requiring high switching speeds and miniaturized designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
HAT1044M-EL-E-VB MOSFET parameter description
- **Package type**: SOT23-6
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 54mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology type**: Trench
- **Package type**: SOT23-6
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**: 54mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology type**: Trench
Domain and module applications：
HAT1044M-EL-E-VB MOSFET Applications and Module Examples
The HAT1044M-EL-E-VB is particularly suitable for portable electronic devices and high-density circuit boards due to its small package and low on-resistance. It performs well in mobile devices, battery-powered applications, such as smartphones and portable medical devices. In the field of power management, this MOSFET can be used in load switches, battery protection circuits, and small DC-DC converters. Due to its high switching speed and low on-resistance, the HAT1044M-EL-E-VB is also suitable for high-frequency switching applications such as switching regulators and power management integrated circuits (PMICs).
The HAT1044M-EL-E-VB is particularly suitable for portable electronic devices and high-density circuit boards due to its small package and low on-resistance. It performs well in mobile devices, battery-powered applications, such as smartphones and portable medical devices. In the field of power management, this MOSFET can be used in load switches, battery protection circuits, and small DC-DC converters. Due to its high switching speed and low on-resistance, the HAT1044M-EL-E-VB is also suitable for high-frequency switching applications such as switching regulators and power management integrated circuits (PMICs).
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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