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HAT1043M-EL-E-VB Product details
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HAT1043M-EL-E-VB MOSFET Product Introduction
HAT1043M-EL-E-VB is a high-performance P-Channel MOSFET in SOT23-6 package, designed for various power switching and load control applications. The device is manufactured using Trench technology and has low on-resistance and high current handling capability, making it suitable for modern electronic devices with high requirements for switching performance and energy efficiency. HAT1043M-EL-E-VB provides high withstand voltage and low on-resistance, and can achieve excellent switching performance in a smaller package.
HAT1043M-EL-E-VB is a high-performance P-Channel MOSFET in SOT23-6 package, designed for various power switching and load control applications. The device is manufactured using Trench technology and has low on-resistance and high current handling capability, making it suitable for modern electronic devices with high requirements for switching performance and energy efficiency. HAT1043M-EL-E-VB provides high withstand voltage and low on-resistance, and can achieve excellent switching performance in a smaller package.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
HAT1043M-EL-E-VB MOSFET Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
- **Package**: SOT23-6
- **Configuration**: Single P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Drain current (ID)**: -4.8A
- **Technology**: Trench
Domain and module applications：
HAT1043M-EL-E-VB MOSFET Applications and Module Examples
1. **Power Switch**: The low on-resistance and high switching performance of the HAT1043M-EL-E-VB make it an ideal choice for power switch applications. Especially in mobile devices and portable electronics, it can provide efficient energy switching, help extend battery life and improve overall system efficiency.
2. **Load Switch**: In load switch applications, the HAT1043M-EL-E-VB can effectively control the on and off of the load, especially in situations where there are strict requirements on the stability and efficiency of the load switch. Its small package is suitable for applications with limited space.
3. **Battery Management System**: Due to its good switching performance and low on-resistance, the HAT1043M-EL-E-VB is very suitable for switch control in battery management systems. This can help achieve efficient battery protection and management, improve system reliability and battery life.
4. **Low-power switching circuit**: In low-power circuits, the high efficiency and small package characteristics of HAT1043M-EL-E-VB are very suitable. It can be used in switching circuits in various electronic devices to reduce power consumption and improve circuit efficiency.
Through these application examples, HAT1043M-EL-E-VB MOSFET demonstrates its wide application potential in various high-efficiency switching and load control occasions.
1. **Power Switch**: The low on-resistance and high switching performance of the HAT1043M-EL-E-VB make it an ideal choice for power switch applications. Especially in mobile devices and portable electronics, it can provide efficient energy switching, help extend battery life and improve overall system efficiency.
2. **Load Switch**: In load switch applications, the HAT1043M-EL-E-VB can effectively control the on and off of the load, especially in situations where there are strict requirements on the stability and efficiency of the load switch. Its small package is suitable for applications with limited space.
3. **Battery Management System**: Due to its good switching performance and low on-resistance, the HAT1043M-EL-E-VB is very suitable for switch control in battery management systems. This can help achieve efficient battery protection and management, improve system reliability and battery life.
4. **Low-power switching circuit**: In low-power circuits, the high efficiency and small package characteristics of HAT1043M-EL-E-VB are very suitable. It can be used in switching circuits in various electronic devices to reduce power consumption and improve circuit efficiency.
Through these application examples, HAT1043M-EL-E-VB MOSFET demonstrates its wide application potential in various high-efficiency switching and load control occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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