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HAF2007-90S-VB Product details
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HAF2007-90S-VB MOSFET Product Introduction
HAF2007-90S-VB is a high-performance N-Channel MOSFET in TO252 package, designed to meet the high performance and high reliability requirements of modern electronic devices. The device is manufactured using Trench technology, has low on-resistance and high drain current capability, and is suitable for a variety of power management and switching applications. Its design goal is to provide superior conduction performance and switching characteristics, while taking into account the compact package design to meet the requirements of high-density electronic design.
HAF2007-90S-VB is a high-performance N-Channel MOSFET in TO252 package, designed to meet the high performance and high reliability requirements of modern electronic devices. The device is manufactured using Trench technology, has low on-resistance and high drain current capability, and is suitable for a variety of power management and switching applications. Its design goal is to provide superior conduction performance and switching characteristics, while taking into account the compact package design to meet the requirements of high-density electronic design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HAF2007-90S-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
HAF2007-90S-VB MOSFET Applications and Module Examples
1. **Power Management Module**: The low on-resistance and high current handling capability of HAF2007-90S-VB make it very suitable for use in power management modules. Such modules usually require efficient energy conversion and low power consumption. HAF2007-90S-VB can effectively reduce energy loss and improve the overall efficiency of the system.
2. **DC-DC Converter**: In DC-DC converters, the high current capability and low on-resistance of HAF2007-90S-VB help improve the performance and efficiency of the converter. Especially under high switching frequency and high load conditions, this MOSFET can provide stable working performance.
3. **Motor Drive Circuit**: Due to its high current carrying capacity and low on-resistance, HAF2007-90S-VB is also suitable for motor drive circuits. It can effectively control the switching of the motor to ensure smooth operation and high efficiency.
4. **Switching Power Supply**: In the design of switching power supply, HAF2007-90S-VB is an ideal choice due to its high withstand voltage and low on-resistance. It can be used for efficient switching control, reducing power consumption and improving the stability and reliability of the overall system.
Through these application examples, HAF2007-90S-VB demonstrates its advantages in various power management and switching applications, adapting to the needs of modern electronic design for efficient, reliable and high-performance devices.
1. **Power Management Module**: The low on-resistance and high current handling capability of HAF2007-90S-VB make it very suitable for use in power management modules. Such modules usually require efficient energy conversion and low power consumption. HAF2007-90S-VB can effectively reduce energy loss and improve the overall efficiency of the system.
2. **DC-DC Converter**: In DC-DC converters, the high current capability and low on-resistance of HAF2007-90S-VB help improve the performance and efficiency of the converter. Especially under high switching frequency and high load conditions, this MOSFET can provide stable working performance.
3. **Motor Drive Circuit**: Due to its high current carrying capacity and low on-resistance, HAF2007-90S-VB is also suitable for motor drive circuits. It can effectively control the switching of the motor to ensure smooth operation and high efficiency.
4. **Switching Power Supply**: In the design of switching power supply, HAF2007-90S-VB is an ideal choice due to its high withstand voltage and low on-resistance. It can be used for efficient switching control, reducing power consumption and improving the stability and reliability of the overall system.
Through these application examples, HAF2007-90S-VB demonstrates its advantages in various power management and switching applications, adapting to the needs of modern electronic design for efficient, reliable and high-performance devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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