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HAF2007-90STL-E-VB Product details
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HAF2007-90STL-E-VB Product Introduction
HAF2007-90STL-E-VB is a high-performance N-channel MOSFET in TO252 package, designed for applications requiring high power and low conduction loss. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V, this MOSFET provides excellent current management capabilities. Its threshold voltage (Vth) is 1.7V, which enables it to start at a low gate-source voltage, thereby improving switching efficiency. The device uses advanced Trench trench technology and has an on-resistance (RDS(ON)) of 85mΩ @ VGS=4.5V and 73mΩ @ VGS=10V, and a maximum drain current of up to 18A. This allows the HAF2007-90STL-E-VB to perform well in a variety of power and switching applications.
HAF2007-90STL-E-VB is a high-performance N-channel MOSFET in TO252 package, designed for applications requiring high power and low conduction loss. With a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of 20V, this MOSFET provides excellent current management capabilities. Its threshold voltage (Vth) is 1.7V, which enables it to start at a low gate-source voltage, thereby improving switching efficiency. The device uses advanced Trench trench technology and has an on-resistance (RDS(ON)) of 85mΩ @ VGS=4.5V and 73mΩ @ VGS=10V, and a maximum drain current of up to 18A. This allows the HAF2007-90STL-E-VB to perform well in a variety of power and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
HAF2007-90STL-E-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench (trench technology)
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench (trench technology)
Domain and module applications：
Applications and Modules
HAF2007-90STL-E-VB MOSFET is widely used in many fields and modules, mainly including:
1. **Switching Power Supply (SMPS)**: In switching power supply design, HAF2007-90STL-E-VB can effectively reduce conduction loss and improve power conversion efficiency. Its low on-resistance and high current capability make it excellent in DC-DC converters and inverters.
2. **Motor Drive**: In motor drive applications, this MOSFET can handle higher currents and is suitable for controlling the start, operation and speed regulation of the motor to ensure smooth operation and response speed of the system.
3. **LED Lighting**: The high efficiency characteristics of HAF2007-90STL-E-VB make it suitable for use in LED lighting systems to drive LED arrays, providing stable current and low energy loss.
4. **Battery Management System (BMS)**: In a battery management system, this MOSFET can be used in battery protection circuits to ensure safety and efficiency during battery charging and discharging.
5. **Automotive Electronics**: Due to its high voltage and high current capabilities, the HAF2007-90STL-E-VB is suitable for various switch control applications in automotive electronics, such as battery-powered systems and electric power steering systems.
These application examples demonstrate the powerful capabilities of the HAF2007-90STL-E-VB in high-efficiency power management and current control, making it an ideal choice for various electronic systems.
HAF2007-90STL-E-VB MOSFET is widely used in many fields and modules, mainly including:
1. **Switching Power Supply (SMPS)**: In switching power supply design, HAF2007-90STL-E-VB can effectively reduce conduction loss and improve power conversion efficiency. Its low on-resistance and high current capability make it excellent in DC-DC converters and inverters.
2. **Motor Drive**: In motor drive applications, this MOSFET can handle higher currents and is suitable for controlling the start, operation and speed regulation of the motor to ensure smooth operation and response speed of the system.
3. **LED Lighting**: The high efficiency characteristics of HAF2007-90STL-E-VB make it suitable for use in LED lighting systems to drive LED arrays, providing stable current and low energy loss.
4. **Battery Management System (BMS)**: In a battery management system, this MOSFET can be used in battery protection circuits to ensure safety and efficiency during battery charging and discharging.
5. **Automotive Electronics**: Due to its high voltage and high current capabilities, the HAF2007-90STL-E-VB is suitable for various switch control applications in automotive electronics, such as battery-powered systems and electric power steering systems.
These application examples demonstrate the powerful capabilities of the HAF2007-90STL-E-VB in high-efficiency power management and current control, making it an ideal choice for various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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