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HAF1009S-VB Product details
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1. Product Introduction
HAF1009S-VB is a high-performance TO263 packaged single P-channel MOSFET designed for high current and high voltage applications. It has a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) range of ±20V. This MOSFET uses Trench technology to provide extremely low on-resistance, with an on-resistance of 25mΩ at a gate drive of 4.5V and 19mΩ at a gate drive of 10V. Its threshold voltage (Vth) is -1.7V and the maximum continuous drain current (ID) is -80A. This feature makes the HAF1009S-VB very suitable for switching applications that require high current and high efficiency, such as load switching, power management, and motor drive.
HAF1009S-VB is a high-performance TO263 packaged single P-channel MOSFET designed for high current and high voltage applications. It has a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) range of ±20V. This MOSFET uses Trench technology to provide extremely low on-resistance, with an on-resistance of 25mΩ at a gate drive of 4.5V and 19mΩ at a gate drive of 10V. Its threshold voltage (Vth) is -1.7V and the maximum continuous drain current (ID) is -80A. This feature makes the HAF1009S-VB very suitable for switching applications that require high current and high efficiency, such as load switching, power management, and motor drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -80A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -1.7V | -80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. Detailed parameter description
- **Model**: HAF1009S-VB
- **Package type**: TO263
- **Channel type**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: -80A
- **Technology type**: Trench
- **Power consumption**: Typically in the 80W range, depending on the heat dissipation conditions.
- **Switching speed**: Suitable for high-frequency applications with low switching losses.
- **Operating temperature range**: -55°C to 150°C
- **Model**: HAF1009S-VB
- **Package type**: TO263
- **Channel type**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: -80A
- **Technology type**: Trench
- **Power consumption**: Typically in the 80W range, depending on the heat dissipation conditions.
- **Switching speed**: Suitable for high-frequency applications with low switching losses.
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
**1. Power management module**: The low on-resistance and high current handling capability of HAF1009S-VB make it an excellent choice in power management modules. It can be used as a load switch, providing efficient and reliable switching functions in high current applications, and is suitable for use in power supplies, DC-DC converters and battery management systems.
**2. Motor drive**: This MOSFET is suitable for motor drive systems, especially in electric vehicles and industrial automation equipment. Its high current carrying capacity and low on-resistance ensure the efficiency and stability of the motor drive, thereby improving the overall performance and energy efficiency of the system.
**3. Load switch**: In applications that need to control high power loads, such as power distribution and protection circuits, the low on-resistance and high current handling capability of HAF1009S-VB make it an ideal choice. It can be used as an efficient load switch to ensure reliable operation under high load conditions.
**4. High current switching circuit**: HAF1009S-VB also performs well in high current switching circuits. For example, in the high-efficiency power supply system of the data center, it can handle high current loads and ensure the stability and efficiency of the system. In addition, it can provide excellent performance in various high current switching applications.
**1. Power management module**: The low on-resistance and high current handling capability of HAF1009S-VB make it an excellent choice in power management modules. It can be used as a load switch, providing efficient and reliable switching functions in high current applications, and is suitable for use in power supplies, DC-DC converters and battery management systems.
**2. Motor drive**: This MOSFET is suitable for motor drive systems, especially in electric vehicles and industrial automation equipment. Its high current carrying capacity and low on-resistance ensure the efficiency and stability of the motor drive, thereby improving the overall performance and energy efficiency of the system.
**3. Load switch**: In applications that need to control high power loads, such as power distribution and protection circuits, the low on-resistance and high current handling capability of HAF1009S-VB make it an ideal choice. It can be used as an efficient load switch to ensure reliable operation under high load conditions.
**4. High current switching circuit**: HAF1009S-VB also performs well in high current switching circuits. For example, in the high-efficiency power supply system of the data center, it can handle high current loads and ensure the stability and efficiency of the system. In addition, it can provide excellent performance in various high current switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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