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HAF1004-90S-VB Product details
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Product Introduction of HAF1004-90S-VB
HAF1004-90S-VB is a high-performance P-channel power MOSFET in TO-252 package, designed for applications requiring negative voltage. This MOSFET has excellent switching performance and low on-resistance, suitable for high current and high efficiency electronic devices. Its main features include a maximum drain-source voltage of -60V, a gate-source voltage of up to ±20V, and a threshold voltage of -1.7V. The on-resistance (RDS(ON)) is 100mΩ@VGS=4.5V, 90mΩ@VGS=10V, and supports a continuous drain current of up to -30A. Using Trench technology, this MOSFET can provide excellent switching speed and low conduction loss, suitable for a variety of high-efficiency electronic applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description of HAF1004-90S-VB
- **Package type**: TO-252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=4.5V
- 90mΩ @ VGS=10V
- **Drain current (ID)**: -30A
- **Technology type**: Trench
- **Maximum power dissipation (Pd)**: 45W
- **Switching speed**: Fast
- **Junction capacitance (Ciss)**: 650pF @ VDS=-25V, VGS=0V
- **Reverse recovery time (trr)**: 30ns
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples of HAF1004-90S-VB
HAF1004-90S-VB MOSFET has excellent negative voltage handling capability and low on-resistance, making it very suitable for a variety of high-efficiency and high-reliability applications. The following are some typical application fields and module examples:
1. **Battery-powered system**: In battery-powered devices, HAF1004-90S-VB can be used as a power switch in the battery management system (BMS), effectively managing the battery charging and discharging process, and improving the stability and efficiency of the system.
2. **DC-DC Converter**: In the DC-DC converter, HAF1004-90S-VB can achieve efficient current conduction and switching control, and is suitable for high-efficiency power modules that require negative voltage.
3. **Electric vehicle power system**: This MOSFET is suitable for the power management system of electric vehicles, such as motor drive control and battery protection circuits, providing high current carrying capacity and reliable negative voltage control.
4. **Reverse power protection**: In the reverse power protection circuit, HAF1004-90S-VB can effectively protect the circuit from damage caused by incorrect power polarity, ensuring the reliability of the system.
5. **Switching power supply (SMPS)**: In the negative switching part of the switching power supply, HAF1004-90S-VB can achieve efficient negative voltage switching, reduce power consumption and improve the overall efficiency of the system.
These application areas and modules take advantage of the low on-resistance and high current carrying capacity of HAF1004-90S-VB to significantly improve the performance and reliability of electronic equipment.
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