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H9926CTS-VB Product details
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H9926CTS-VB MOSFET Product Introduction
H9926CTS-VB is a dual-channel N+N-Channel MOSFET in TSSOP8 package, with high efficiency and low on-resistance, which is very suitable for applications with high space and power requirements. The device adopts advanced Trench technology to ensure efficient conduction performance at low gate drive voltage, which is suitable for high-density power management and switching applications.
H9926CTS-VB is a dual-channel N+N-Channel MOSFET in TSSOP8 package, with high efficiency and low on-resistance, which is very suitable for applications with high space and power requirements. The device adopts advanced Trench technology to ensure efficient conduction performance at low gate drive voltage, which is suitable for high-density power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
H9926CTS-VB MOSFET Detailed parameter description
- **Package**: TSSOP8
- **Configuration**: Common drain-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.6A
- **Technology**: Trench
- **Package**: TSSOP8
- **Configuration**: Common drain-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 32mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
- **Drain current (ID)**: 6.6A
- **Technology**: Trench
Domain and module applications：
H9926CTS-VB MOSFET Applications and Module Examples
1. **Power Management Module**: H9926CTS-VB is widely used in power management modules for portable devices and mobile devices due to its low on-resistance and efficient current handling capability. These modules require efficient energy conversion in a small package while ensuring low power consumption and heat dissipation.
2. **DC-DC Converter**: Due to its superior switching performance and low on-resistance, H9926CTS-VB is very suitable for use in DC-DC converters, especially in applications where high-efficiency voltage regulation is required. It can effectively reduce switching losses and improve the overall efficiency of the converter.
3. **Battery Management System**: In battery management systems, H9926CTS-VB can be used in battery protection circuits to ensure safe operation of the battery during charging and discharging. Its low on-resistance helps reduce energy loss, thereby extending battery life.
4. **Load switch**: H9926CTS-VB can also be used as a load switch, especially in applications with high space and thermal management requirements. Its small package and low resistance characteristics make it an ideal load switch choice in portable devices and consumer electronics.
Through these application examples, H9926CTS-VB MOSFET demonstrates its versatility and superior performance in modern electronic design.
1. **Power Management Module**: H9926CTS-VB is widely used in power management modules for portable devices and mobile devices due to its low on-resistance and efficient current handling capability. These modules require efficient energy conversion in a small package while ensuring low power consumption and heat dissipation.
2. **DC-DC Converter**: Due to its superior switching performance and low on-resistance, H9926CTS-VB is very suitable for use in DC-DC converters, especially in applications where high-efficiency voltage regulation is required. It can effectively reduce switching losses and improve the overall efficiency of the converter.
3. **Battery Management System**: In battery management systems, H9926CTS-VB can be used in battery protection circuits to ensure safe operation of the battery during charging and discharging. Its low on-resistance helps reduce energy loss, thereby extending battery life.
4. **Load switch**: H9926CTS-VB can also be used as a load switch, especially in applications with high space and thermal management requirements. Its small package and low resistance characteristics make it an ideal load switch choice in portable devices and consumer electronics.
Through these application examples, H9926CTS-VB MOSFET demonstrates its versatility and superior performance in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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