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H7P0601DSTL-E-VB Product details
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H7P0601DSTL-E-VB MOSFET Product Introduction
The H7P0601DSTL-E-VB is a single P-channel power MOSFET in a TO252 package with a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is -1.7V, and the on-resistance (RDS(ON)) is 58mΩ and 46mΩ at a gate drive voltage of 4.5V and 10V, respectively. The device has a maximum continuous drain current (ID) of -35A and uses Trench technology with low on-resistance and high efficiency, making it suitable for a variety of high-reliability applications.
The H7P0601DSTL-E-VB is a single P-channel power MOSFET in a TO252 package with a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) range of ±20V. Its threshold voltage (Vth) is -1.7V, and the on-resistance (RDS(ON)) is 58mΩ and 46mΩ at a gate drive voltage of 4.5V and 10V, respectively. The device has a maximum continuous drain current (ID) of -35A and uses Trench technology with low on-resistance and high efficiency, making it suitable for a variety of high-reliability applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
H7P0601DSTL-E-VB Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 58mΩ @ VGS = 4.5V
- 46mΩ @ VGS = 10V
- **Drain current (ID)**: -35A
- **Technology type**: Trench
- **Other features**: Low on-resistance, fast switching, high voltage resistance, etc.
- **Package type**: TO252
- **Polarity configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 58mΩ @ VGS = 4.5V
- 46mΩ @ VGS = 10V
- **Drain current (ID)**: -35A
- **Technology type**: Trench
- **Other features**: Low on-resistance, fast switching, high voltage resistance, etc.
Domain and module applications：
Applications and module examples
1. **Power management module**: The H7P0601DSTL-E-VB can be used in DC-DC converters and switch mode power supplies (SMPS), where its low on-resistance and high current handling capability can effectively reduce power consumption and improve conversion efficiency.
2. **Automotive electronics**: In automotive systems, this MOSFET is suitable for battery management systems (BMS) and electric motor control units. Its high current capability and reliability make it perform well in harsh automotive environments.
3. **Industrial control**: In industrial control systems such as motor drives and load switches, the H7P0601DSTL-E-VB provides stable performance and is suitable for application scenarios that require efficient switching and low conduction losses.
4. **Consumer electronics**: This MOSFET can also be used in the power management section of smart home appliances and portable devices, helping to achieve more efficient energy conversion and longer battery life.
1. **Power management module**: The H7P0601DSTL-E-VB can be used in DC-DC converters and switch mode power supplies (SMPS), where its low on-resistance and high current handling capability can effectively reduce power consumption and improve conversion efficiency.
2. **Automotive electronics**: In automotive systems, this MOSFET is suitable for battery management systems (BMS) and electric motor control units. Its high current capability and reliability make it perform well in harsh automotive environments.
3. **Industrial control**: In industrial control systems such as motor drives and load switches, the H7P0601DSTL-E-VB provides stable performance and is suitable for application scenarios that require efficient switching and low conduction losses.
4. **Consumer electronics**: This MOSFET can also be used in the power management section of smart home appliances and portable devices, helping to achieve more efficient energy conversion and longer battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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