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H7N1005LS-VB Product details
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1. Product Introduction
The H7N1005LS-VB is a single N-channel MOSFET in a TO263 package, suitable for applications requiring high-efficiency switching. Its main features are a drain-source voltage (VDS) of 100V and support for gate-source voltages (VGS) up to ±20V. The device uses advanced Trench technology to achieve excellent turn-on characteristics at lower gate drive voltages and has a threshold voltage (Vth) of 1.8V. At a gate drive voltage of 10V, the MOSFET has an on-resistance (RDS(ON)) of 100mΩ and a maximum continuous drain current (ID) of 20A, making it suitable for applications such as power management, DC-DC converters, and motor control.
The H7N1005LS-VB is a single N-channel MOSFET in a TO263 package, suitable for applications requiring high-efficiency switching. Its main features are a drain-source voltage (VDS) of 100V and support for gate-source voltages (VGS) up to ±20V. The device uses advanced Trench technology to achieve excellent turn-on characteristics at lower gate drive voltages and has a threshold voltage (Vth) of 1.8V. At a gate drive voltage of 10V, the MOSFET has an on-resistance (RDS(ON)) of 100mΩ and a maximum continuous drain current (ID) of 20A, making it suitable for applications such as power management, DC-DC converters, and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: H7N1005LS-VB
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology type**: Trench
- **Power consumption**: Typically in the 50W range, depending on heat dissipation conditions.
- **Switching speed**: Suitable for high-frequency applications with low switching losses.
- **Operating temperature range**: -55°C to 150°C
- **Model**: H7N1005LS-VB
- **Package type**: TO263
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 20A
- **Technology type**: Trench
- **Power consumption**: Typically in the 50W range, depending on heat dissipation conditions.
- **Switching speed**: Suitable for high-frequency applications with low switching losses.
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples
**1. Power management module**: H7N1005LS-VB performs well in power management modules, especially for efficient current conversion and regulation in switching power supplies (SMPS). Its high current carrying capacity and low on-resistance ensure stability and efficiency at higher voltages, and is suitable for applications in servers, data centers, and industrial power supplies that require regulated output.
**2. DC-DC converter**: This MOSFET can be used in DC-DC converters, especially in automotive electronics, such as on-board chargers and electric power steering systems. Its fast switching characteristics and low conduction losses enable efficient energy transmission in smaller modules, thereby improving the energy efficiency of the entire system.
**3. Motor control**: In motor drive applications, the low on-resistance and high current handling capability of H7N1005LS-VB help achieve precise motor control and reduce power losses. It is commonly used in brushless DC motor control systems in industrial automation and efficient motor drives in home appliances.
**4. Solar Inverter**: This MOSFET is also suitable for use in solar inverters, especially in parts that need to handle higher voltages. Its high voltage handling capability and low switching losses help improve the overall efficiency of the inverter, allowing it to convert solar energy into electricity more efficiently.
**1. Power management module**: H7N1005LS-VB performs well in power management modules, especially for efficient current conversion and regulation in switching power supplies (SMPS). Its high current carrying capacity and low on-resistance ensure stability and efficiency at higher voltages, and is suitable for applications in servers, data centers, and industrial power supplies that require regulated output.
**2. DC-DC converter**: This MOSFET can be used in DC-DC converters, especially in automotive electronics, such as on-board chargers and electric power steering systems. Its fast switching characteristics and low conduction losses enable efficient energy transmission in smaller modules, thereby improving the energy efficiency of the entire system.
**3. Motor control**: In motor drive applications, the low on-resistance and high current handling capability of H7N1005LS-VB help achieve precise motor control and reduce power losses. It is commonly used in brushless DC motor control systems in industrial automation and efficient motor drives in home appliances.
**4. Solar Inverter**: This MOSFET is also suitable for use in solar inverters, especially in parts that need to handle higher voltages. Its high voltage handling capability and low switching losses help improve the overall efficiency of the inverter, allowing it to convert solar energy into electricity more efficiently.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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