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H7N1005DL-VB Product details
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1. Product Introduction of H7N1005DL-VB
H7N1005DL-VB is a high-efficiency N-channel power MOSFET in TO-251 package with excellent conduction performance and voltage resistance. Its main features include 100V drain-source voltage (VDS), ±20V gate-source voltage (VGS) and 1.8V threshold voltage (Vth). The device has a low on-resistance (RDS(ON) is 110mΩ@VGS=10V), can achieve efficient current conduction at low gate drive voltage, and can support up to 15A continuous drain current. The use of advanced Trench technology gives it excellent switching performance and durability, suitable for high-efficiency power conversion and control systems.
H7N1005DL-VB is a high-efficiency N-channel power MOSFET in TO-251 package with excellent conduction performance and voltage resistance. Its main features include 100V drain-source voltage (VDS), ±20V gate-source voltage (VGS) and 1.8V threshold voltage (Vth). The device has a low on-resistance (RDS(ON) is 110mΩ@VGS=10V), can achieve efficient current conduction at low gate drive voltage, and can support up to 15A continuous drain current. The use of advanced Trench technology gives it excellent switching performance and durability, suitable for high-efficiency power conversion and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | 110mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description of H7N1005DL-VB
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 110mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench
- **Maximum power dissipation (Pd)**: 45W
- **Switching speed**: Fast
- **Junction capacitance (Ciss)**: 850pF @ VDS=25V, VGS=0V
- **Reverse recovery time (trr)**: 50ns
- **Operating temperature range**: -55°C to +150°C
- **Package type**: TO-251
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 110mΩ @ VGS=10V
- **Drain current (ID)**: 15A
- **Technology type**: Trench
- **Maximum power dissipation (Pd)**: 45W
- **Switching speed**: Fast
- **Junction capacitance (Ciss)**: 850pF @ VDS=25V, VGS=0V
- **Reverse recovery time (trr)**: 50ns
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
3. Application fields and module examples of H7N1005DL-VB
H7N1005DL-VB MOSFET has high voltage tolerance and low on-resistance, making it very suitable for various high-efficiency power conversion and control applications. The following are some typical application fields and module examples:
1. **Electric vehicle control module**: In the power management system of electric vehicles, H7N1005DL-VB can be used in battery management unit (BMU) and DC-DC converter (DC-DC Converter) to achieve efficient current conduction and energy conversion.
2. **Photovoltaic inverter**: This MOSFET can be used in the inverter module in the photovoltaic system to improve energy conversion efficiency and reduce energy loss through efficient switching performance.
3. **Switching power supply (SMPS)**: In the switching power supply, H7N1005DL-VB can be used as the main switching device to help improve the power conversion efficiency, reduce heat, and improve system reliability.
4. **Industrial control equipment**: H7N1005DL-VB is suitable for various industrial automation equipment, such as motor drivers and switch control parts in programmable logic controllers (PLCs), to ensure the stability and efficiency of the system.
5. **Household appliance control module**: In the power control modules of household appliances such as washing machines and air conditioners, this MOSFET can improve power conversion efficiency, reduce energy consumption, and extend equipment life.
H7N1005DL-VB MOSFET has high voltage tolerance and low on-resistance, making it very suitable for various high-efficiency power conversion and control applications. The following are some typical application fields and module examples:
1. **Electric vehicle control module**: In the power management system of electric vehicles, H7N1005DL-VB can be used in battery management unit (BMU) and DC-DC converter (DC-DC Converter) to achieve efficient current conduction and energy conversion.
2. **Photovoltaic inverter**: This MOSFET can be used in the inverter module in the photovoltaic system to improve energy conversion efficiency and reduce energy loss through efficient switching performance.
3. **Switching power supply (SMPS)**: In the switching power supply, H7N1005DL-VB can be used as the main switching device to help improve the power conversion efficiency, reduce heat, and improve system reliability.
4. **Industrial control equipment**: H7N1005DL-VB is suitable for various industrial automation equipment, such as motor drivers and switch control parts in programmable logic controllers (PLCs), to ensure the stability and efficiency of the system.
5. **Household appliance control module**: In the power control modules of household appliances such as washing machines and air conditioners, this MOSFET can improve power conversion efficiency, reduce energy consumption, and extend equipment life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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