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H7N1004LS-VB Product details
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H7N1004LS-VB MOSFET Product Introduction
The H7N1004LS-VB is a unipolar N-channel MOSFET that uses advanced Trench technology to optimize high-efficiency power management and switching applications. This MOSFET is packaged in a TO263 package, has a maximum drain-source voltage (VDS) of 100V, and can withstand a continuous drain current (ID) of up to 45A. Its low gate threshold voltage (Vth) of 1.8V ensures that it can be easily driven in a variety of circuits, making it an excellent choice for high-speed and low-power switching applications.
The H7N1004LS-VB is a unipolar N-channel MOSFET that uses advanced Trench technology to optimize high-efficiency power management and switching applications. This MOSFET is packaged in a TO263 package, has a maximum drain-source voltage (VDS) of 100V, and can withstand a continuous drain current (ID) of up to 45A. Its low gate threshold voltage (Vth) of 1.8V ensures that it can be easily driven in a variety of circuits, making it an excellent choice for high-speed and low-power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package:** TO263
- **Configuration:** Unipolar N-channel
- **Drain-source voltage (VDS):** 100V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 1.8V
- **RDS(ON) @ VGS=4.5V:** 35mΩ
- **RDS(ON) @ VGS=10V:** 30mΩ
- **Continuous leakage current (ID):** 45A
- **Technology:** Trench
- **Package:** TO263
- **Configuration:** Unipolar N-channel
- **Drain-source voltage (VDS):** 100V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 1.8V
- **RDS(ON) @ VGS=4.5V:** 35mΩ
- **RDS(ON) @ VGS=10V:** 30mΩ
- **Continuous leakage current (ID):** 45A
- **Technology:** Trench
Domain and module applications：
Application Examples
1. **Power Supply Unit (PSU):** The H7N1004LS-VB is ideal for use in high-efficiency power supply units (PSUs) as the main switching device. Its low RDS(ON) ensures minimal conduction losses and improves overall power efficiency, making it suitable for ATX power supplies and server power supplies.
2. **Motor Control:** In motor control applications, especially in automotive and industrial environments, this MOSFET can be used to drive medium-power motors. Its high current handling capability and low on-resistance help reduce heat generation and ensure reliable operation.
3. **DC-DC Converters:** This MOSFET is ideal for use in DC-DC converters, especially in buck and boost configurations. Its high switching speed and efficiency make it suitable for voltage regulator modules (VRMs) for CPUs and GPUs, where fast transient response and low power consumption are critical.
4. **Battery Management System (BMS):** The H7N1004LS-VB can be used in battery management systems for electric vehicles (EVs) and energy storage systems. It ensures efficient switching and power distribution, contributing to longer battery life and better energy management.
These examples show how the characteristics of the H7N1004LS-VB MOSFET make it a versatile component for a wide range of applications in power electronics.
1. **Power Supply Unit (PSU):** The H7N1004LS-VB is ideal for use in high-efficiency power supply units (PSUs) as the main switching device. Its low RDS(ON) ensures minimal conduction losses and improves overall power efficiency, making it suitable for ATX power supplies and server power supplies.
2. **Motor Control:** In motor control applications, especially in automotive and industrial environments, this MOSFET can be used to drive medium-power motors. Its high current handling capability and low on-resistance help reduce heat generation and ensure reliable operation.
3. **DC-DC Converters:** This MOSFET is ideal for use in DC-DC converters, especially in buck and boost configurations. Its high switching speed and efficiency make it suitable for voltage regulator modules (VRMs) for CPUs and GPUs, where fast transient response and low power consumption are critical.
4. **Battery Management System (BMS):** The H7N1004LS-VB can be used in battery management systems for electric vehicles (EVs) and energy storage systems. It ensures efficient switching and power distribution, contributing to longer battery life and better energy management.
These examples show how the characteristics of the H7N1004LS-VB MOSFET make it a versatile component for a wide range of applications in power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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