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H7N1004FN-VB Product details
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H7N1004FN-VB MOSFET Product Introduction
The H7N1004FN-VB is a single N-channel MOSFET in a TO220F package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. The device is manufactured using advanced Trench technology and has low on-resistance (RDS(ON)) and high current handling capability. Typical applications include switching power supplies, DC motor controllers and inverters.
The H7N1004FN-VB is a single N-channel MOSFET in a TO220F package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. The device is manufactured using advanced Trench technology and has low on-resistance (RDS(ON)) and high current handling capability. Typical applications include switching power supplies, DC motor controllers and inverters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | 34mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
H7N1004FN-VB MOSFET parameter description
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 34mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology type**: Trench
Domain and module applications：
H7N1004FN-VB MOSFET Applications and Module Examples
The characteristics of the H7N1004FN-VB make it ideal for efficient power conversion and high power density designs. Its high current handling capability and low on-resistance make it an ideal power switch element in switching power supplies, reducing energy losses and improving system efficiency. In addition, this MOSFET performs well in DC motor controllers, capable of withstanding high currents and achieving precise control. In inverter modules, the H7N1004FN-VB can be used in power stage designs to provide reliable current delivery and stable operation, especially for photovoltaic inverters and uninterruptible power supply (UPS) systems.
The characteristics of the H7N1004FN-VB make it ideal for efficient power conversion and high power density designs. Its high current handling capability and low on-resistance make it an ideal power switch element in switching power supplies, reducing energy losses and improving system efficiency. In addition, this MOSFET performs well in DC motor controllers, capable of withstanding high currents and achieving precise control. In inverter modules, the H7N1004FN-VB can be used in power stage designs to provide reliable current delivery and stable operation, especially for photovoltaic inverters and uninterruptible power supply (UPS) systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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