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H7N1004DSTL-E-VB Product details
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1. H7N1004DSTL-E-VB MOSFET Product Introduction
The H7N1004DSTL-E-VB is a single N-channel MOSFET in a TO-252 package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) tolerance of ±20V. The device uses advanced Trench technology and is designed for applications that require high performance and high current handling capabilities. Its on-resistance (RDS(ON)) is 35mΩ at VGS of 4.5V and 30mΩ at VGS of 10V, and it can support a drain current (ID) of up to 40A, making it ideal for a variety of power management and control applications.
The H7N1004DSTL-E-VB is a single N-channel MOSFET in a TO-252 package with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) tolerance of ±20V. The device uses advanced Trench technology and is designed for applications that require high performance and high current handling capabilities. Its on-resistance (RDS(ON)) is 35mΩ at VGS of 4.5V and 30mΩ at VGS of 10V, and it can support a drain current (ID) of up to 40A, making it ideal for a variety of power management and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. H7N1004DSTL-E-VB MOSFET Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS = 4.5V, 30mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Trench technology
- **Package**: TO-252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS = 4.5V, 30mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module application examples of H7N1004DSTL-E-VB MOSFET
1. **Power management module**:
The low on-resistance and high current handling capability of H7N1004DSTL-E-VB make it an excellent performer in power management modules, especially for applications that require efficient energy conversion, such as DC-DC converters and voltage regulators. It can reduce conduction losses, thereby improving overall system efficiency.
2. **Automotive electronics**:
This MOSFET is very suitable for automotive electronics applications, such as automotive lighting, motor drive control systems, etc. In these applications, H7N1004DSTL-E-VB can provide a stable current supply to ensure that the system can operate stably under different working conditions.
3. **Industrial control equipment**:
In industrial automation and control systems, H7N1004DSTL-E-VB is an ideal choice for driving high-power loads. Its high voltage and high current handling capabilities make it an excellent choice for industrial environments that require precise control and fast response.
4. **Consumer Electronics**:
The H7N1004DSTL-E-VB is also suitable for high-power consumer electronics such as laptop power adapters and audio systems. These devices require efficient power management, and this MOSFET can meet these requirements to ensure that the device remains stable under high loads.
5. **Renewable Energy Systems**:
In renewable energy applications such as solar inverters and wind power generation control systems, the high performance and reliability of the H7N1004DSTL-E-VB can improve energy conversion efficiency and ensure long-term stable operation of the system.
In summary, the H7N1004DSTL-E-VB MOSFET has demonstrated its wide applicability in multiple fields, especially in power management, automotive electronics, and industrial control, which require high efficiency and high reliability.
1. **Power management module**:
The low on-resistance and high current handling capability of H7N1004DSTL-E-VB make it an excellent performer in power management modules, especially for applications that require efficient energy conversion, such as DC-DC converters and voltage regulators. It can reduce conduction losses, thereby improving overall system efficiency.
2. **Automotive electronics**:
This MOSFET is very suitable for automotive electronics applications, such as automotive lighting, motor drive control systems, etc. In these applications, H7N1004DSTL-E-VB can provide a stable current supply to ensure that the system can operate stably under different working conditions.
3. **Industrial control equipment**:
In industrial automation and control systems, H7N1004DSTL-E-VB is an ideal choice for driving high-power loads. Its high voltage and high current handling capabilities make it an excellent choice for industrial environments that require precise control and fast response.
4. **Consumer Electronics**:
The H7N1004DSTL-E-VB is also suitable for high-power consumer electronics such as laptop power adapters and audio systems. These devices require efficient power management, and this MOSFET can meet these requirements to ensure that the device remains stable under high loads.
5. **Renewable Energy Systems**:
In renewable energy applications such as solar inverters and wind power generation control systems, the high performance and reliability of the H7N1004DSTL-E-VB can improve energy conversion efficiency and ensure long-term stable operation of the system.
In summary, the H7N1004DSTL-E-VB MOSFET has demonstrated its wide applicability in multiple fields, especially in power management, automotive electronics, and industrial control, which require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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